AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications. This device is manufactured using advanced LDMOS technology offering state-of-the-art performance and reliability. It is packaged in an industrystandard package and is capable of delivering a minimum output power of 45 W, which makes it ideally suited for today’s RF power amplifier applications. Figure 1. Available (flanged) Package Features Typical performance ratings for GSM EDGE (f = 1.840 GHz, POUT = 15 W) — Error vector magnitude (EVM): 1.9% — Power gain: 15 dB — Drain efficiency: 32% — Modulation spectrum: @ ±400 kHz = –63 dBc. @ ±600 kHz = –73 dBc. Typical continuous wave (CW) performance over entire digital communication system (DCS) band: — P1dB: 49 W typical (typ). — Power gain: @ P1dB = 14 dB. — Efficiency: @ P1dB = 53% typ. — Return loss: –12 dB. High-reliability, gold-metallization process. Low hot carrier injection (HCI) induced bias drift over 20 years. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. 45 W minimum output power. Device can withstand 10:1 voltage standing wave ratio (VSWR) at 26 Vdc, 1.840 GHz, 45 W CW output power. Large signal impedance parameters available. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case Sym Rı JC Value 1.5 Unit °C/W Table 2. Absolute Maximum Ratings* Parameter Sym Value Drain-source Voltage VDSS 65 Gate-source Voltage VGS –0.5, 15 Drain Current Continuous ID Total Dissipation at TC = 25 °C PD 115 Derate Above 25 °C — 0.67 Operating Junction TemperaTJ 200 ture Storage Temperature Range TSTG –65, 150 Unit Vdc Vdc Adc W W/°C °C °C * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Table 3. ESD Rating* AGR18045E HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4 * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. PEAK Agere Devices employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Electrical Characteristics Recommended operating conditions apply unless otherwise specified: TC = 30 °C. Table 4. dc Characteristics Parameter Symbol Min Typ V(BR)DSS 65 — IDSS — Max Unit Off Characteristics 38 µA) Drain-source Breakdown Voltage (VGS = 0 V, ID ==200 Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) IGSS Zero Gate Voltage Drain Leakage Current (VDS = 26 V, VGS = 0 V) — — Vdc — — 1.5 75 4 µAdc µAdc — S On Characteristics Forward Transconductance (VDS = 10 V, ID = 0.4 A) GFS — 3.2 VGS(Q) 3.8 — Symbol Gate Threshold Voltage (VDS = 10 V, ID = 150 µA) VGS(TH) Drain-source On-voltage (VGS = 10 V, ID = 0.5 A) VDS(ON) Gate Quiescent Voltage (VDS = 26 V, ID = 400 mA) — — 4.8 — 0.22 — Min CRSS COSS Vdc — Vdc Typ Max Un i t — 1.0 — pF — 24 — pF Vdc Table 5. RF Characteristics Parameter Drain-to-gate Capacitance (VDS = 26 V, VGS = 0 V, f = 1 MHz) Dynamic Characteristics Drain-to-source Capacitance (VDS = 26 V, VGS = 0 V, f = 1 MHz) (in Supplied Test Fixture) Functional Tests* (in Agere Systems Supplied Test Fixture) Power Gain (VDS = 26 V, POUT = 15 W, IDQ = 400 mA) Drain Efficiency (VDS = 26 V, POUT = 15 W, IDQ = 400 mA) GL — 15 — dB η — 32 — % — –63 — dBc — 49 — W EDGE Linearity Characterization (POUT = 15 W, f = 1.840 GHz, VDS = 26 V, IDQ = 400 mA) Modulation spectrum @ ±400 kHz Modulation spectrum @ ±600 kHz Output Power (VDS = 26 V, 1 dB gain compression, IDQ = 400 mA) Input Return Loss Ruggedness (VDS = 26 V, POUT = 45 W, IDQ = 400 mA, VSWR = 10:1 [all angles]) * Across full DCS band, 1.805 GHz—1.880 GHz. P1dB IRL ψ — — –73 –12 — — No degradation in output power. dBc dB AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Test Circuit Illustrations for AGR18045E R1 VDD FB1 VGG C5 C4 Z1 C1 C6 Z12 C3 C7 C8 C9 C10 Z11 Z2 Z3 Z4 2 1 3 RF INPUT Z5 Z6 Z7 Z8 Z9 DUT C2 Z10 RF OUTPUT PINS: 1. DRAIN, 2. SOURCE, 3. GATE A. Schematic J3 C5 C4 J1 C3 FB1 C10 C6 C7 C9 C8 R1 J2 C2 C1 Parts List: ? Microstrip line: Z1 0.840 in. x 0.066 in.; Z2 0.598 in. x 0.066 in.: Z3 0.135 in. x 0.866 in.; Z4 0.175 in. x 0.866 in.; Z5 0.148 in. x 0.650 in.; Z6 0.212 in. x 0.650 in.; Z7 0.190 in. x 0.320 in.; Z8 0.200 in. x 0.140 in.; Z9 0.253 in. x 0.066 in.; Z10 0.745 in. x 0.066 in.; Z11 0.050 in. x 0.820 in.; Z12 0.050 in. x 0.950 in. ® ? ATC chip capacitors: C1: 20 pF, 600F200JT250; C2: 10 pF, 100B100JW500; C3, C6: 8.2 pF, 600F8R2CT250. ® ? Murata chip capacitors: C4, C7: 0.047 µF, LLL317R71H473KD01L; C8: 0.01 µF, GRM216R71H103KA01; C9: 0.1 µF, GRM21BR71H104KA01. ® ? Sprague tantalum surface-mount chip capacitors: C9, C10: 22 µF, 35 V, T495X226KO3SAS. ® ? Vishay 1206 size chip resistor: R1: 4.7 kΩ, CRCW12064R75F100. ® ? Amphenol connectors: J1, J2: 901-10019. ® ? WECO connector: J3: 140-A-524-SMD/6. ® ? Fair-Rite ferrite bead: FB1: 2743019447. ® ? Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, εr = 3.5. B. Component Layout Figure 2. AGR18045E Test Circuit AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor U CT 0.6 90 IN D 0. 8 10 0.1 0.4 20 50 20 10 5.0 4.0 3.0 1.8 2.0 1.6 1.4 1.2 50 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.2 Ð RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo) D L OA D < OW A R 7 HST 0.4 N GT -170 EL E V WA <Ð -90 -160 0.2 20 0.4 1. 0 IV CT R ,O o) 0 2. 1.8 1.6 1.4 0.7 1.2 1.0 5 -4 0.14 -80 0.35 0.9 0 -4 0.15 0.36 -110 0.11 -100 -90 0.13 0.1 9 0.0 0 -12 -70 40 -1 0. 0. 07 30 -1 43 0. 8 0.0 2 0.4 0.4 1 0.4 0.39 0.38 F 0.37 0.12 CE CO M (-j 06 Z X/ -70 0 6 4 -75 IN DU 0.1 0.3 -5 35 0.8 3 -60 5 0.3 7 VE -5 0.1 CA P AC I TI -60 -30 32 RE AC TA N T 0.6 18 0. 0.2 EN 0 -65 .5 0. PO N 4 0 -5 -25 31 0. 19 0. 4 0. 0 0.4 0.48 ) / Yo (-jB CE 0.6 5 0 -20 -85 AN PT CE US ES 0.8 -80 0 1. 3. 0.3 0.0 4.0 0.2 5 0.4 -15 4 0.0 0 -15 5.0 0.4 0.2 8 f3 -4 4 0. f1 0.2 2 ZS 0.2 9 0.2 1 -30 0.3 f1 ZL -10 8 0. -20 0.2 f3 0.6 10 0.1 6 50 0.49 0.25 0.2 6 0.24 0.27 0.23 0.25 0.24 0.26 0.23 0.27 REFL ECTI ON COEFFI CI EN T I N D EG REES L E OF ANG I SSI ON COEFFI CI EN T I N TRA N SM D EGR EES L E OF ANG Z0 = 4 Ω 0.0 Ð > W A V EL E N GTH S TOW A RD 0.0 0.49 0.48 ± 180 170 Typical Performance Characteristics GHz (f) 1.805 (f1) 1.843 (f2) 1.880 (f3) ZS Ω ZL Ω (Complex Source Impedance) (Complex Optimum Load Impedance) 3.33 – j7.50 5.76 – j3.74 3.18 – j7.14 5.53 – j3.45 3.03 – j6.88 5.34 – j3.24 GATE (2) ZS DRAIN (1) ZL SOURCE (3) INPUT MATCH DUT OUTPUT MATCH Figure 3. Series Equivalent Input and Output Impedances AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor 70 70 60 60 POUT POUT (W)Z 50 50 40 40 30 30 20 20 10 10 0 0.0 0.5 1.0 1.5 TEST CONDITIONS: VDD = 26 V, IDQ = 400 mA, f = 1842.5 MHz, CW MEASUREMENT. 2.0 2.5 3.0 3.5 DRAIN EFFICIENCY (%)Z Typical Performance Characteristics (continued) 0 PIN (W)Z Figure 4. Output Power and Efficiency vs. Input Power 17 16 IDQ = 550 mA 15 IDQ = 475 mA IDQ = 400 mA GPS (dB)Z 14 IDQ = 325 mA 13 IDQ = 250 mA 12 11 10 9 8 0.0 0.1 TEST CONDITIONS: VDD = 26 V, f = 1842.5 MHz, CW MEASUREMENT. 1.0 10.0 POUT (W)Z Figure 5. CW Power Gain vs. Output Power 100.0 1000.0 AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Typical Performance Characteristics (continued) 16.0 0 15.5 GPS -2 15.0 -4 14.5 14.0 GPS (dB)Z -8 13.5 -10 13.0 -12 IRL 12.5 -14 12.0 -16 11.5 11.0 1750 IRL (dB)Z -6 -18 1770 1790 1810 1830 1850 1870 1890 1910 FREQUENCY (MHz)Z 1930 -20 1950 TEST CONDITIONS. CONDITIONS: VDD = 26 V, IDQ = 400 mA, PIN = 25 dBm, CW MEASUREMENT. Figure 6. Wideband Gain and Return Loss 16.0 15.5 IDQ = 550 mA 15.0 IDQ = 475 mA 14.5 GPS (dB)Z IDQ = 400 mA 14.0 IDQ = 325 mA 13.5 13.0 IDQ = 250 mA 12.5 12.0 0.1 1.0 10.0 POUT (W) (PEP)Z TEST CONDITIONS. CONDITIONS: VDD = 26 V, fc = 1842.5 MHz, TWO-TONE MEASUREMENT, 100 kHz SPACING. Figure 7. Two Tone Power Gain vs. Output Power 100.0 AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Typical Performance Characteristics (continued) -20.0 -25.0 -30.0 IDQ = 250 mA IMD3 (dBc) -35.0 -40.0 IDQ = 325 mA -45.0 -50.0 IDQ = 400 mA IDQ = 550 mA -55.0 -60.0 IDQ = 475 mA 0.1 1.0 10.0 100.0 POUT (W) (PEP)A TEST CONDITIONS: VDD = 26 V, fc = 1842.5 MHz, TWO-TONE MEASUREMENT, 100 kHz SPACING. 50 -25 45 -30 40 -35 35 -40 30 -45 25 400 kHz 20 -55 15 GPS 10 600 kHz 5 0 -50 0.1 1.0 POUT (W)Z 10.0 -60 -65 -70 -75 100.0 TEST CONDITIONS: VDD = 26 V, IDQ = 400 mA, fc = 1842.5 MHz, EDGE MODULATION. Figure 9. Power Gain, Efficiency, and Spectral Regrowth vs. Output Power SPECTRAL REGROWTH (dBc)Z GPS (dB), DRAIN EFFICIENCY (%)Z Figure 8. Intermodulation Distortion vs. Output Power AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor 50 10 45 9 40 8 35 7 EVM 30 6 25 5 20 4 15 GPS 3 10 2 5 1 0 1.0 10.0 POUT (W)Z TEST CONDITIONS: VDD = 26 V, IDQ = 800 mA, fc = 1842.5 MHz, EDGE MODULATION. Figure 10. Power Gain, Efficiency, and EVM vs. Output Power 0 100.0 EVM (% RMS)Z GPS (dB), DRAIN EFFICIENCY (%)Z Typical Performance Characteristics (continued) AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Package Dimensions All dimensions are in inches. Tolerances are ±0.005 in. unless specified. AGR18045EF 1 A DEVICES PEAK AGR18045EU AGR21045F YYWWLL xxxx ZZZZZZZ 2 XXXX - TRACE CODE 3 PINS: 1. DRAIN 2. GATE 3. SOURCE 1 3 2