TRIQUINT AGR09090EF

AGR09090EF
90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF
power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution
(EDGE), cellular, and multicarrier class AB power amplifier
applications. This device is manufactured on an advanced
LDMOS technology, offering state-of-the-art performance
and reliability. Packaged in an industry-standard package
and capable of delivering a minimum output power of 90 W,
it is ideally suited for today's wireless base station RF
power amplifier applications.
Figure 1. AGR09090EF (Flanged) Package
GSM Features
Typical performance ratings for GSM EDGE
(f = 941 MHz, POUT = 40 W):
— Modulation spectrum:
@ ±400 kHz = –60 dBc.
@ ±600 kHz = –72 dBc.
— Error vector magnitude (EVM) = 2.3%.
Typical performance over entire GSM band:
— P1dB: 105 W typical.
— Power gain: @ P1dB = 17.8 dB.
— Efficiency @ P1dB = 60% typical.
— Return loss: –10 dB.
Cellular Features
Typical performance ratings (f = 880 MHz,
POUT = 40 W):
— Modulation spectrum:
@ ±400 kHz = –60 dBc.
@ ±600 kHz = –72 dBc.
— Error vector magnitude (EVM) = 2.3%.
Typical performance over entire GSM band:
— P1dB: 105 W typical.
— Power gain: @ P1dB = 17.6 dB.
— Efficiency @ P1dB = 60% typical.
— Return loss: –10 dB.
GSM/Cellular Features
High-reliability, gold-metalization process.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
90 W minimum output power.
Table 1. Thermal Characteristics
(921 MHz—960 MHz, and 865 MHz—895 MHz)
Parameter
Thermal Resistance,
Junction to Case:
AGR09090EF
Sym
Value
Unit
R JC
0.80
°C/W
Table 2. Absolute Maximum Ratings*
(921 MHz—960 MHz, and 865 MHz—895 MHz)
Parameter
Drain-source Voltage
Gate-source Voltage
Drain Current—Continuous
Total Dissipation at TC = 25 °C:
AGR09090EF
Derate Above 25 C:
AGR09090EF
Operating Junction
Temperature
Storage Temperature Range
Sym
Value
65
VDSS
VGS –0.5, +15
8.5
ID
Unit
Vdc
Vdc
Adc
PD
219
W
—
TJ
1.25
200
W/°C
°C
TSTG –65, +150
°C
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
(921 MHz—960 MHz, and 865 MHz—895 MHz)
AGR09090EF
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. PEAK
Agere Devices
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be
observed.
AGR09090EF
90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics (921 MHz—960 MHz, 865 MHz—895 MHz)
Parameter
Off Characteristics
200 µA)
Drain-source Breakdown Voltage (VGS = 0, ID = 300
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
—
—
Vdc
Gate-source Leakage Current (VGS = 5 V, VDS = 0 V)
IGSS
—
—
µAdc
Zero Gate Voltage Drain Leakage Current (VDS = 26 V, VGS = 0 V)
IDSS
—
—
2.6
150
8
GFS
—
6
—
S
µAdc
On Characteristics
Forward Transconductance (VDS = 10 V, ID = 1.0 A)
Gate Threshold Voltage (VDS = 10 V, ID = 400 µA)
VGS(TH)
—
—
4.8
Vdc
Gate Quiescent Voltage (VDS = 26 V, IDQ = 700 mA)
VGS(Q)
—
3.6
—
Vdc
Drain-source On-voltage (VGS = 10 V, ID = 1.0 A)
VDS(ON)
—
0.12
—
Vdc
Symbol
Min
Typ
Max
Unit
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
COSS
—
48
—
pF
Reverse Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
CRSS
—
2.3
—
pF
17
17.8
—
dB
50
60
—
%
Table 5. RF Characteristics (921 MHz—960 MHz)
Parameter
Dynamic Characteristics
Test Fixture)
Functional Tests (in Supplied
Agere Systems
Supplied Test Fixture)1
Power Gain
(VDS = 26 V, POUT = 50 W, IDQ = 700 mA)
GL
Drain Efficiency
(VDS = 26 V, POUT = P1dB, IDQ = 700 mA)
EDGE Linearity Characterization2
(POUT = 40 W, f = 941 MHz, VDS = 26 V, IDQ = 700 mA)
Modulation Spectrum @ ±400 kHz
—
—
–60
—
dBc
Modulation Spectrum @ ±600 kHz
—
—
–72
—
dBc
P1dB
90
105
—
W
—
–10
—
dB
Output Power
(VDS = 26 V, 1 dB gain compression, IDQ = 700 mA)
Input Return Loss
Ruggedness
(VDS = 26 V, POUT = 90 W, IDQ = 700 mA, VSWR = 10:1, all angles)
1. Across full GSM band, 921 MHz—960 MHz.
2. Measured according to 3GPP GSM 05.05.
RL
No degradation in output
power.
Preliminary Data Sheet
April 2004
AGR09090EF
90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Electrical Characteristics (continued)
Table 6. RF Characteristics (865 MHz—895 MHz)
Parameter
Symbol
Min
Typ
Max
Unit
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
COSS
—
48
—
pF
Reverse Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
CRSS
—
2.3
—
pF
—
17.6
—
dB
—
60
—
%
—
—
–60
—
dBc
Dynamic Characteristics
Functional Tests (in Agere Systems Supplied Test Fixture)1
Power Gain
(VDS = 26 V, POUT = 50 W, IDQ = 700 mA)
GL
Drain Efficiency
(VDS = 26 V, POUT = P1dB, IDQ = 700 mA)
EDGE Linearity Characterization2
(POUT = 40 W, f = 880 MHz, VDS = 26 V, IDQ = 700 mA)
Modulation Spectrum @ ±400 kHz
Modulation Spectrum @ ±600 kHz
Output Power
(VDS = 26 V, 1 dB gain compression, IDQ = 700 mA)
Input Return Loss
Ruggedness
(VDS = 26 V, POUT = 90 W, IDQ = 700 mA, VSWR = 10:1, all angles)
1. Across full cellular band, 865 MHz—895 MHz.
2. Measured according to 3GPP GSM 05.05.
Agere Systems Inc.
—
—
–72
—
dBc
P1dB
—
105
—
W
RL
—
–10
—
dB
No degradation in output
power.
AGR09090EF
90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Test Circuit Illustrations for AGR09090EF, 921 MHz—960 MHz
Z17
VDD
C16 C17 C18 C19 C20
VGG
R2
Z15
FB1
Z16
Z18
Z19
Z20
Z21 C15 Z22
RF OUTPUT
C10
C22
C9
C8
C7
Z6
C6
C13
Z14
R1
C21
C14
Z13
C23
Z12
C12
Z11
C11
2
RF
INPUT
Z23
Z1
Z24
C1
Z2
Z3
Z4
C2
Z5
Z7
Z8
C3
Z9
C4
Z10
PINS:
1. DRAIN
2. GATE
3. SOURCE
1
DUT
3
C5
A. Schematic, 921 MHz—960 MHz
Parts List:
Microstrip line: Z1 0.035 in. x 0.066 in.; Z2 0.120 in. x 0.066 in.; Z3 0.475 in. x 0.100 in.; Z4 0.050 in. x 0.100 in.; Z5 0.129 in. x 0.100 in.;
Z6 0.958 in. x 0.050 in.; Z7 0.629 in. x 0.532 in.; Z8 0.050 in. x 0.532 in.; Z9 0.100 in. x 0.532 in.; Z10 0.050 in. x 0.532 in.;
Z11 0.412 in. x 0.532 in.; Z12 0.050 in. x 0.532 in.; Z13 0.122 in. x 0.532 in.; Z15 0.050 in. x 0.532 in.; Z16 0.173 in. x 0.532 in.;
Z17 1.916 in. x 0.050 in.; Z18 0.734 in. x 0.100 in.; Z19 0.050 in. x 0.100 in.; Z20 0.086 in. x 0.100 in.; Z21 0.208 in. x 0.066 in.;
Z22 0.208 in. x 0.066 in.; Z23 0.278 in. x 0.066 in.; Z24 0.305 x 0.050
ATC ® chip capacitor: C1, C6, C15, C16: 47 pF 100B470JW500X; C2: 2.7 pF 100B2R7JW500X; C3: 2.0 pF 100B2R0CW
C4, C5, C11, C12: 12 pF 100B120JW500X; C7: 22 pF 100B220JW500X; C13, C21: 1 pF 100B1R0BW500X; C14: 4.7 pF 100B4R7CW;
C17: 10 pF 100B100JW500X; C23: 8.2 pF 100A8R2CW.
Sprague® tantalum surface-mount chip capacitor: C10, C20 10 µF, 35 V; C22 22 µF, 35 V.
Murata ® 0805 size chip capacitor: C8, C18: 0.01 µF GRM40X7R103K100AL.
Kemet® 1206 size chip capacitor: C9, C19: 0.1 µF C1206104K5RAC7800.
1206 size chip resistor: R1 51
RM73B2B510, R2 1 k RM73B2B130.
Kreger® ferrite bead: FB1 2743D19447.
®
Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5.
B. Component Layout, 921 MHz—960 MHz
Figure 2. AGR09090EF Test Circuit, 921 MHz—960 MHz
AGR09090EF
90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Test Circuit Illustrations for AGR09090EF, 865 MHz—895 MHz
Z17
VDD
C16 C17 C18 C19 C20
VGG
R2
Z15
FB1
Z16
Z18
Z19
Z20
Z21 C15 Z22
RF OUTPUT
C10
C9
C22
C8
C7
Z6
C6
C13
Z14
R1
C21
C14
Z13
Z12
C12
Z11
C11
2
RF
INPUT
Z1
C1
Z2
Z3
Z4
Z5
C2
Z7
Z8
C3
Z9
C4
Z10
PINS:
1. DRAIN
2. GATE
3. SOURCE
1
DUT
3
C5
A. Schematic, 865 MHz—895 MHz
Parts List:
Microstrip line: Z1 0.193 in. x 0.066 in.; Z2 0.321 in. x 0.066 in.; Z3 0.179 in. x 0.100 in.; Z4 0.050 in. x 0.100 in.; Z5 0.425 in. x 0.100 in.;
Z6 0.958 in. x 0.050 in.; Z7 0.629 in. x 0.532 in.; Z8 0.050 in. x 0.532 in.; Z9 0.100 in. x 0.532 in.; Z10 0.050 in. x 0.532 in.;
Z11 0.412 in. x 0.532 in.; Z12 0.050 in. x 0.532 in.; Z13 0.122 in. x 0.532 in.; Z15 0.050 in. x 0.532 in.; Z16 0.173 in. x 0.532 in.;
Z17 1.916 in. x 0.050 in.; Z18 0.656 in. x 0.100 in.; Z19 0.050 in. x 0.100 in.; Z20 0.114 in. x 0.100 in.; Z21 0.208 in. x 0.066 in.;
Z22 0.208 in. x 0.066 in.
ATC ® chip capacitor: C1, C6, C15, C16: 47 pF 100B470JW500X; C2, 2.7 pF 100B2R7JW500X; C3, C17, 10 pF 100B100JW500X;
C4, C5, C11, C12: 12 pF 100B120JW500X; C7, 22 pF 100B220JW500X; C13, C21: 1 pF 100B1R0BW500X; C14, 4.7 pF 100B4R7JW500X.
Sprague ® tantalum surface-mount chip capacitor: C10, C20 10 µF, 35 V; C22 22 µF, 35 V.
Kemet® 1206 size chip capacitor: C9, C19: 0.1 µF C1206104K5RAC7800.
Murata ® 0805 size chip capacitor: C8, C18: 0.01 µF GRM40X7R103K100AL.
1206 size chip resistor: R1 51
RM73B2B510, R2 1 k RM73B2B130.
Kreger® ferrite bead: FB1 2743D19447.
®
Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5.
B. Component Layout, 865 MHz—895 MHz
Figure 3. AGR09090EF Test Circuit, 865 MHz—895 MHz
AGR09090EF
90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
U CT
0.4
20
50
20
10
5.0
4.0
3.0
2.0
1.6
1.4
1.2
1.8
50
1.0
0.9
0.7
0.8
0.6
0.5
0.4
0.3
0.2
0.1
f1
0.2
0.1
Ð
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
50
0.2
20
0.4
)
/ Yo
(-jB
CE
1.
0
I
CT
V
0
1.0
5
0.14
-80
0.11
-100
-90
0.12
0.13
0.38
0.37
0.1
9
0.0
DU
IN
,O
o)
R
-75
40
-1
06
-70
5
0.
5
0.
07
30
-1
43
0.
8
0.0
2
0.4
.41
0
0.4
0.39
F
0.36
-110
0
-12
(-j
0.
2.
1.8
1.6
0.15
0.35
0.9
1.2
1.4
0.7
0
-4
-4
4
-70
0
6
-5
5
-3
0.1
0.3
0.8
3
-60
5
0.3
7
-5
0.1
VE
-60
32
CA P
AC
I TI
0.6
0.2
-30
CE
CO
M
-65
18
0.
RE
AC
TA
N
T
4
Z
X/
0.
EN
4
0.
0
-5
-25
31
0.
19
0.
PO
N
-85
AN
PT
CE
US
ES
0.4
0.0
0.6
0
-20
5
0.8
3.
0.3
0.4
0
1.
0.2
0
0
4.0
f1
-4
.4
-15
ZS
0.2
8
0.3
0.2
2
f3
0.2
9
0.2
1
-30
6
0.4
4
0.0
0
-15 -80
8
0.
-20
0.2
5.0
0.48
10
0.6
-10
0.49
0.6
90
IN D
0.
8
10
ZL
D L OA D <
OW A R
7
HST
0.4
N GT
-170
EL E
V
WA
<Ð
-90
-160
0.25
0.2
6
0.24
0.27
0.23
0.25
0.24
0.26
0.23
0.27
REFL ECTI ON COEFFI CI EN T I N D EG
REES
L E OF
ANG
I SSI ON COEFFI CI EN T I N
TRA N SM
D EGR
EES
f3
0.1
Z0 = 4 Ω
L E OF
ANG
0.0 Ð > W A V EL E
N GTH
S TOW
A RD
0.0
0.49
0.48
± 180
170
Typical Performance Characteristics
MHz (f)
921 (f1)
940.5
960 (f3)
ZS Ω
(Complex Source Impedance)
0.731 – j1.676
0.869 – j1.611
0.912 – j1.569
GATE (2)
ZS
ZL Ω
(Complex Optimum Load Impedance)
1.478 + j0.538
1.393 + j0.657
1.300 + j0.761
DRAIN (1)
ZL
SOURCE (3)
INPUT MATCH
DUT
OUTPUT MATCH
Figure 4. Series Equivalent Input and Output Impedances, 921 MHz—960 MHz
AGR09090EF
90 W, 865 MHz —960 MHz, N-Channel E-Mode, Lateral MOSFET
U CT
0.6
90
IN D
0.
8
0.1
0.4
ZL
20
50
20
10
5.0
4.0
3.0
2.0
1.8
1.6
1.4
1.2
50
1.0
0.9
0.8
f1
0.7
0.6
0.5
0.4
0.3
0.2
0.1
f3
0.2
Ð
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
D L OA D <
OW A R
7
HST
0.4
N GT
-170
EL E
V
WA
<Ð
-90
-160
0.2
20
)
/ Yo
(-jB
CE
1.
0
IV
CT
IN
DU
R
0
2.
5
0.11
-100
-90
0.12
0.13
0.38
0.37
0.1
9
0.0
40
-1
06
-70
0.
07
30
-1
43
0.
8
0.0
2
0.4
0.4
1
0.4
0.39
F
0.36
-110
0
-65 .5
1.8
1.6
1.4
1.2
1.0
-4
0.14
-80
0.35
0.9
0
-4
0.15
0
-70
-5
6
4
0
-12
(-j
5
,O
o)
0.7
0.1
0.3
0.8
35
5
3
-60
-5
0.3
7
VE
-60
0.1
CA P
AC
I TI
CE
CO
M
0.6
-30
32
RE
AC
TA
N
T
0.0
Z
X/
18
0.
0.2
EN
0.
0
-5
-25
PO
N
4
0.
0.4
0.
-75
0.6
0
-20
31
0.
19
0.
4
0.8
-85
AN
PT
CE
US
ES
4.0
3.
0.3
5
0.4
0
1.
-15
4
0.0
0
-15 -80
5.0
0.2
0
-4
4
0.
0.2
8
f1
0.2
2
0.4
8
0.
-10
0.48
0.6
ZS
0.2
9
0.2
1
-30
0.3
10
0.2
0.4
f3
-20
6
50
0.49
0.25
0.2
6
0.24
0.27
0.23
0.25
0.24
0.26
0.23
0.27
REFL ECTI ON COEFFI CI EN T I N D EG
REES
L E OF
ANG
I SSI ON COEFFI CI EN T I N
TRA N SM
D EGR
EES
10
0.1
Z0 = 4 Ω
L E OF
ANG
0.0 Ð > W A V EL E
N GTH
S TOW
A RD
0.0
0.49
0.48
± 180
170
Typical Performance Characteristics (continued)
MHz (f)
865 (f1)
880
895 (f3)
ZS Ω
(Complex Source Impedance)
0.524 – j0.947
0.516 – j0.835
0.477 – j0.738
GATE (2)
ZS
ZL Ω
(Complex Optimum Load Impedance)
1.654 – j0.066
1.656 – j0.006
1.639 + j0.043
DRAIN (1)
ZL
SOURCE (3)
INPUT MATCH
DUT
OUTPUT MATCH
Figure 5. Series Equivalent Input and Output Impedances, 865 MHz—895 MHz
AGR09090EF
90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
TYPICAL DATA
19.0
IDQ = 1000 mA
IDQ = 1100 mA
18.5
POWER GAIN (dB)Z
18.0
17.5
IDQ = 900 mA
17.0
IDQ = 800 mA
IDQ = 700 mA
16.5
16.0
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100 105 110 115 120 125 130
POUT (W)Z
Test Conditions:
VDD = 26 V, FREQUENCY = 940.5 MHz.
Figure 6. Power Gain vs. POUT, 921 MHz—960 MHz
TYPICAL DATA
-30.0
3.5
3.0
MODULATION SPECTRUM (dBc)Z
+/- 400 kHz
-50.0
2.5
-60.0
2.0
-70.0
1.5
-80.0
1.0
+/- 600 kHz
-90.0
0.5
EVM
-100.0
0.0
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
POUT (dBm)Z
Test Conditions:
VDD = 26 V, FREQUENCY = 940.5 MHz, IDQ = 700 mA.
RES BW: 30 kHz, VIDEO BW: 300 Hz, EDGE FORMAT = 3GPP GSM 05.05.
Figure 7. Modulation Spectrum and EVM vs. POUT, 921 MHz—960 MHz
47
ERROR VECTOR MODULATION (%)Z
-40.0
AGR09090EF
W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
TYPICAL DATA
70
65
IDQ = 800 mA
60
55
EFFICIENCY (%)Z
50
45
40
35
30
25
IDQ = 1100 mA
20
15
10
5
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100 105 110 115 120 125 130
POUT (W)Z
Test Conditions:
VDD = 26 V, FREQUENCY = 940.5 MHz.
Figure 8. Efficiency vs. POUT, 921 MHz—960 MHz
TYPICAL DATA
-58
57
54
+/- 400 kHz
-60
51
-61
48
-62
45
-63
42
-64
39
-65
36
-66
33
EFFICIENCY
-67
30
-68
27
GAIN
-69
24
-70
21
-71
18
-72
15
-73
12
-74
9
+/- 600 kHz
-75
6
-76
920
GAIN (dB) AND EFFICIENCY (%)Z
MODULATION SPECTRUM (dBc)Z
-59
3
925
930
935
940
945
950
955
960
FREQUENCY (MHz)Z
Test Conditions:
VDD = 26 V, EDGE FORMAT, IDQ = 700 mA, POUT = 40 W.
Figure 9. Modulation Spectrum, Gain, and Efficiency vs. Frequency, 921 MHz—960 MHz
AGR09090EF
90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
TYPICAL DATA
18.5
PG @ POUT = 59 W
-8
17.5
-10
17.0
-12
16.5
-14
16.0
-16
PG @ POUT = 114 W
15.5
-18
RETURN LOSS
15.0
-20
14.5
-22
14.0
-24
13.5
RETURN LOSS (dB)Z
POWER GAIN (dB)Z
18.0
-6
-26
920
925
930
935
940
945
950
955
960
FREQUENCY (MHz)Z
Test Conditions:
VDD = 26 V.
Figure 10. Power Gain and Return Loss vs. Frequency, 921 MHz—960 MHz
TYPICAL DATA
140
130
95
POUT @ 940.5 MHz
POUT @ 921 MHz
120
90
110
85
100
80
POUT @ 960 MHz
75
EFFICIENCY @ 960 MHz
80
70
EFFICIENCY @ 940.5 MHz
70
65
60
60
50
55
40
50
30
45
20
40
EFFICIENCY @ 921 MHz
10
35
0
30
0.5
1.0
1.5
PIN (W)Z
2.0
2.5
Test Conditions:
VDD = 26 V.
Figure 11. Power Out and Efficiency vs. Input Power, 921 MHz—960 MHz
3.0
EFFICIENCY (%)Z
90
POUT (W)Z
100
AGR09090EF
90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
TYPICAL DATA
19.0
IDQ = 1000 mA
18.5
IDQ = 900 mA
POWER GAIN (dB)Z
18.0
17.5
IDQ = 800 mA
17.0
IDQ = 700 mA
IDQ = 600 mA
16.5
16.0
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95 100 105 110 115 120 125
POUT (W)Z
Test Conditions:
VDD = 26 V, FREQUENCY = 880 MHz.
Figure 12. Power Gain vs. POUT, 865 MHz—895 MHz
3.5
-40
3.0
-50
2.5
+/- 400 kHz
-60
2.0
-70
1.5
-80
1.0
+/- 600 kHz
EVM
-90
0.5
-100
0.0
27
28
29
30
31
32
33
34
35
36
37
38
POUT (dBm)
39
40
41
42
43
44
45
46
Test Conditions:
VDD = 26 V, FREQUENCY = 880 MHz, IDQ = 700 mA.
RES BW: 30 kHz, VIDEO BW: 300 Hz, EDGE FORMAT = 3GPP GSM 05.05.
Figure 13. Modulation Spectrum and EVM vs. POUT, 865 MHz—895 MHz
47
ERROR VECTOR MODULATION (%)Z
MODULATION SPECTRUM (dBc)Z
TYPICAL DATA
-30
AGR09090EF
90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
TYPICAL DATA
70
65
60
55
EFFICIENCY (%)Z
50
45
IDQ = 700 mA
40
35
30
25
20
IDQ = 1000 mA
15
10
5
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100 105 110 115 120 125
POUT (W)Z
Test Conditions:
VDD = 26 V, FREQUENCY = 880 MHz.
Figure 14. Efficiency vs. POUT, 865 MHz—895 MHz
TYPICAL DATA
-56
60
MODULATION SPECTRUM (dBc)Z
57
+/- 400 kHz
-58
54
-59
51
-60
48
-61
45
-62
42
-63
39
-64
36
EFFICIENCY
-65
33
-66
30
-67
27
-68
24
GAIN
-69
21
-70
18
-71
15
-72
12
-73
9
-74
6
+/- 600 kHz
-75
3
-76
865
GAIN (dB) AND EFFICIENCY (%)Z
-57
0
870
875
880
FREQUENCY (MHz)Z
885
890
895
Test Conditions:
VDD = 26 V, EDGE FORMAT, IDQ = 700 mA, POUT = 40 W.
Figure 15. Modulation Spectrum, Gain, and Efficiency vs. Frequency, 865 MHz—895 MHz
AGR09090EF
90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
TYPICAL DATA
18.5
0
PG @ POUT = 59 W
18.0
-3
17.5
-6
-9
PG @ POUT = 109 W
16.5
-12
16.0
-15
15.5
-18
15.0
RETURN LOSS (dB)Z
POWER GAIN (dB)Z
17.0
-21
RETURN LOSS
14.5
-24
14.0
-27
13.5
-30
865
870
875
880
885
890
895
FREQUENCY (MHz)Z
Test Conditions:
VDD = 26 V.
Figure 16. Power Gain and Return Loss vs. Frequency, 865 MHz—895 MHz
TYPICAL DATA
140.0
100
POUT @ 865 MHz
130.0
95
POUT @ 880 MHz
120.0
90
POUT @ 895 MHz
85
100.0
80
90.0
75
80.0
70
70.0
65
60.0
60
50.0
55
EFFICIENCY @ 880 MHz
40.0
30.0
EFFICIENCY @ 865 MHz
50
45
EFFICIENCY @ 895 MHz
20.0
40
10.0
35
0.0
30
0.5
1.0
1.5
2.0
2.5
PIN (W)Z
Test Conditions:
VDD = 26 V.
Figure 17. Power Out and Efficiency vs. Input Power, 865 MHz—895 MHz
3.0
EFFICIENCY (%)Z
POUT (W)Z
110.0
AGR09090EF
90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
TYPICAL DATA
18.5
0
PG @ POUT = 59 W
18.0
-3
17.5
-6
-9
PG @ POUT = 109 W
16.5
-12
16.0
-15
15.5
-18
15.0
RETURN LOSS (dB)Z
POWER GAIN (dB)Z
17.0
-21
RETURN LOSS
14.5
-24
14.0
-27
13.5
-30
865
870
875
880
885
890
895
FREQUENCY (MHz)Z
Test Conditions:
VDD = 26 V.
Figure 16. Power Gain and Return Loss vs. Frequency, 865 MHz—895 MHz
TYPICAL DATA
140.0
100
POUT @ 865 MHz
130.0
95
POUT @ 880 MHz
120.0
90
POUT @ 895 MHz
85
100.0
80
90.0
75
80.0
70
70.0
65
60.0
60
50.0
55
EFFICIENCY @ 880 MHz
40.0
30.0
EFFICIENCY @ 865 MHz
50
45
EFFICIENCY @ 895 MHz
20.0
40
10.0
35
0.0
30
0.5
1.0
1.5
2.0
2.5
PIN (W)Z
Test Conditions:
VDD = 26 V.
Figure 17. Power Out and Efficiency vs. Input Power, 865 MHz—895 MHz
3.0
EFFICIENCY (%)Z
POUT (W)Z
110.0