MICROSEMI APTM120SK56T1G

APTM120SK56T1G
VDSS = 1200V
RDSon = 560mΩ typ @ Tj = 25°C
ID = 18A @ Tc = 25°C
Buck chopper
MOSFET Power Module
5
11
6
Application
•
•
Q1
7
AC and DC motor control
Switched Mode Power Supplies
Features
8
NTC
3
4
•
CR2
1
2
•
•
•
12
Power MOS 8™ MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Benefits
•
•
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
IDM
VGS
RDSon
PD
IAR
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Tc = 25°C
Max ratings
1200
18
13
104
±30
672
390
14
Unit
V
A
December, 2007
ID
Parameter
Drain - Source Breakdown Voltage
V
mΩ
W
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1–5
APTM120SK56T1G – Rev 0
Symbol
VDSS
APTM120SK56T1G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Tj = 25°C
VDS =1200V
VGS = 0V
Tj = 125°C
VGS = 10V, ID = 14A
VGS = VDS, ID = 2.5mA
VGS = ±30 V
Min
3
Typ
560
4
Max
100
500
672
5
±100
Unit
Max
Unit
µA
mΩ
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 600V
ID = 14A
Td(on)
Turn-on Delay Time
Tr
Td(off)
Tf
Rise Time
Turn-off Delay Time
Fall Time
Min
Typ
7736
715
92
pF
300
nC
50
140
50
Resistive switching @ 25°C
VGS = 15V
VBus = 800V
ID = 14A
RG = 2.2Ω
31
ns
170
48
Chopper diode ratings and characteristics
Maximum Reverse Leakage Current
IF
DC Forward Current
VF
Diode Forward Voltage
VR=1200V
IF = 30A
IF = 60A
IF = 30A
trr
Reverse Recovery Time
IF = 30A
VR = 800V
Qrr
Reverse Recovery Charge
di/dt =200A/µs
Min
1200
Tj = 25°C
Tj = 125°C
Tc = 80°C
Typ
Max
100
500
Tj = 125°C
Tj = 25°C
30
2.6
3.2
1.8
300
Tj = 125°C
380
Tj = 25°C
360
Tj = 125°C
1700
Unit
V
µA
A
3.1
V
ns
nC
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Transistor
Diode
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
www.microsemi.com
M4
2500
-40
-40
-40
2.5
Typ
Max
0.32
1.2
Unit
°C/W
V
150
125
100
4.7
80
°C
N.m
g
2–5
December, 2007
IRM
Test Conditions
APTM120SK56T1G – Rev 0
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
APTM120SK56T1G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
Resistance @ 25°C
R25
B 25/85 T25 = 298.15 K
Min
RT =
R25
Typ
50
3952
Max
Unit
kΩ
K
T: Thermistor temperature
⎡
⎛ 1
1 ⎞⎤ RT: Thermistor value at T
exp ⎢ B25 / 85 ⎜⎜
− ⎟⎟⎥
⎝ T25 T ⎠⎦
⎣
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
Typical Mosfet Performance Curve
0.9
0.25
0.7
0.2
December, 2007
0.3
0.5
0.15
0.3
0.1
0.05
Single P ulse
0.1
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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3–5
APTM120SK56T1G – Rev 0
Thermal Impedance (°C/W)
Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration
0.35
APTM120SK56T1G
Low Voltage Output Characteristics
TJ=125°C
30
ID, Drain Current (A)
VGS=10V
TJ=25°C
20
TJ=125°C
10
0
25
VGS=6, 7, 8 & 9V
20
15
5V
10
4.5V
5
0
0
5
10
15
20
0
5
VDS, Drain to Source Voltage (V)
20
25
30
Transfert Characteristics
3
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ <
0.5 duty cycle
20
VGS=10V
ID=14A
2.5
ID, Drain Current (A)
2
1.5
1
0.5
0
16
TJ=125°C
12
8
TJ=25°C
4
0
25
50
75
100
125
150
0
1
2
3
4
5
6
VGS, Gate to Source Voltage (V)
TJ, Junction Temperature (°C)
Capacitance vs Drain to Source Voltage
Gate Charge vs Gate to Source
10000
12
Ciss
VDS=600V
8
6
VDS=960V
4
2
C, Capacitance (pF)
VDS=240V
ID=14A
TJ=25°C
10
0
1000
Coss
100
Crss
10
0
40
80
120 160 200 240 280 320
Gate Charge (nC)
0
50
100
150
200
December, 2007
RDSon, Drain to Source ON resistance
15
VDS, Drain to Source Voltage (V)
Normalized RDS(on) vs. Temperature
VGS, Gate to Source Voltage
10
VDS, Drain to Source Voltage (V)
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4–5
APTM120SK56T1G – Rev 0
ID, Drain Current (A)
Low Voltage Output Characteristics
30
40
APTM120SK56T1G
Typical Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
1.4
1.2
0.9
1
0.7
0.8
0.5
0.6
0.3
0.4
0.1
0.05
0.2
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Current vs Forward Voltage
Trr vs. Current Rate of Charge
TJ=125°C
40
20
TJ=25°C
0
1.0
2.0
3.0
300
45 A
200
30 A
15 A
100
0
0
4.0
200
TJ=125°C
VR=800V
45 A
3
30 A
2
15 A
1
0
0
200
400
600
800
800 1000 1200
1000 1200
30
30 A
TJ=125°C
VR=800V
25
15 A
20
45 A
15
10
5
0
0
200
-diF/dt (A/µs)
400
600
800
1000 1200
-diF/dt (A/µs)
Capacitance vs. Reverse Voltage
Max. Average Forward Current vs. Case Temp.
50
200
160
Duty Cycle = 0.5
TJ=175°C
40
IF(AV) (A)
C, Capacitance (pF)
600
IRRM vs. Current Rate of Charge
QRR vs. Current Rate Charge
4
400
-diF/dt (A/µs)
IRRM, Reverse Recovery Current (A)
QRR, Reverse Recovery Charge (µC)
VF, Anode to Cathode Voltage (V)
120
80
30
December, 2007
0.0
TJ=125°C
VR=800V
400
20
10
40
0
0
1
10
100
VR, Reverse Voltage (V)
1000
25
50
75
100
125
150
175
Case Temperature (ºC)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5–5
APTM120SK56T1G – Rev 0
60
500
trr, Reverse Recovery Time (ns)
IF, Forward Current (A)
80