APTM120SK56T1G VDSS = 1200V RDSon = 560mΩ typ @ Tj = 25°C ID = 18A @ Tc = 25°C Buck chopper MOSFET Power Module 5 11 6 Application • • Q1 7 AC and DC motor control Switched Mode Power Supplies Features 8 NTC 3 4 • CR2 1 2 • • • 12 Power MOS 8™ MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Very low stray inductance Internal thermistor for temperature monitoring High level of integration Benefits • • • • • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Pins 1/2 ; 3/4 ; 5/6 must be shorted together Absolute maximum ratings IDM VGS RDSon PD IAR Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25°C Max ratings 1200 18 13 104 ±30 672 390 14 Unit V A December, 2007 ID Parameter Drain - Source Breakdown Voltage V mΩ W A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–5 APTM120SK56T1G – Rev 0 Symbol VDSS APTM120SK56T1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Tj = 25°C VDS =1200V VGS = 0V Tj = 125°C VGS = 10V, ID = 14A VGS = VDS, ID = 2.5mA VGS = ±30 V Min 3 Typ 560 4 Max 100 500 672 5 ±100 Unit Max Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 600V ID = 14A Td(on) Turn-on Delay Time Tr Td(off) Tf Rise Time Turn-off Delay Time Fall Time Min Typ 7736 715 92 pF 300 nC 50 140 50 Resistive switching @ 25°C VGS = 15V VBus = 800V ID = 14A RG = 2.2Ω 31 ns 170 48 Chopper diode ratings and characteristics Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage VR=1200V IF = 30A IF = 60A IF = 30A trr Reverse Recovery Time IF = 30A VR = 800V Qrr Reverse Recovery Charge di/dt =200A/µs Min 1200 Tj = 25°C Tj = 125°C Tc = 80°C Typ Max 100 500 Tj = 125°C Tj = 25°C 30 2.6 3.2 1.8 300 Tj = 125°C 380 Tj = 25°C 360 Tj = 125°C 1700 Unit V µA A 3.1 V ns nC Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Transistor Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink www.microsemi.com M4 2500 -40 -40 -40 2.5 Typ Max 0.32 1.2 Unit °C/W V 150 125 100 4.7 80 °C N.m g 2–5 December, 2007 IRM Test Conditions APTM120SK56T1G – Rev 0 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTM120SK56T1G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic Resistance @ 25°C R25 B 25/85 T25 = 298.15 K Min RT = R25 Typ 50 3952 Max Unit kΩ K T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp ⎢ B25 / 85 ⎜⎜ − ⎟⎟⎥ ⎝ T25 T ⎠⎦ ⎣ SP1 Package outline (dimensions in mm) See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com Typical Mosfet Performance Curve 0.9 0.25 0.7 0.2 December, 2007 0.3 0.5 0.15 0.3 0.1 0.05 Single P ulse 0.1 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 3–5 APTM120SK56T1G – Rev 0 Thermal Impedance (°C/W) Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 0.35 APTM120SK56T1G Low Voltage Output Characteristics TJ=125°C 30 ID, Drain Current (A) VGS=10V TJ=25°C 20 TJ=125°C 10 0 25 VGS=6, 7, 8 & 9V 20 15 5V 10 4.5V 5 0 0 5 10 15 20 0 5 VDS, Drain to Source Voltage (V) 20 25 30 Transfert Characteristics 3 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 20 VGS=10V ID=14A 2.5 ID, Drain Current (A) 2 1.5 1 0.5 0 16 TJ=125°C 12 8 TJ=25°C 4 0 25 50 75 100 125 150 0 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) TJ, Junction Temperature (°C) Capacitance vs Drain to Source Voltage Gate Charge vs Gate to Source 10000 12 Ciss VDS=600V 8 6 VDS=960V 4 2 C, Capacitance (pF) VDS=240V ID=14A TJ=25°C 10 0 1000 Coss 100 Crss 10 0 40 80 120 160 200 240 280 320 Gate Charge (nC) 0 50 100 150 200 December, 2007 RDSon, Drain to Source ON resistance 15 VDS, Drain to Source Voltage (V) Normalized RDS(on) vs. Temperature VGS, Gate to Source Voltage 10 VDS, Drain to Source Voltage (V) www.microsemi.com 4–5 APTM120SK56T1G – Rev 0 ID, Drain Current (A) Low Voltage Output Characteristics 30 40 APTM120SK56T1G Typical Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.4 1.2 0.9 1 0.7 0.8 0.5 0.6 0.3 0.4 0.1 0.05 0.2 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage Trr vs. Current Rate of Charge TJ=125°C 40 20 TJ=25°C 0 1.0 2.0 3.0 300 45 A 200 30 A 15 A 100 0 0 4.0 200 TJ=125°C VR=800V 45 A 3 30 A 2 15 A 1 0 0 200 400 600 800 800 1000 1200 1000 1200 30 30 A TJ=125°C VR=800V 25 15 A 20 45 A 15 10 5 0 0 200 -diF/dt (A/µs) 400 600 800 1000 1200 -diF/dt (A/µs) Capacitance vs. Reverse Voltage Max. Average Forward Current vs. Case Temp. 50 200 160 Duty Cycle = 0.5 TJ=175°C 40 IF(AV) (A) C, Capacitance (pF) 600 IRRM vs. Current Rate of Charge QRR vs. Current Rate Charge 4 400 -diF/dt (A/µs) IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (µC) VF, Anode to Cathode Voltage (V) 120 80 30 December, 2007 0.0 TJ=125°C VR=800V 400 20 10 40 0 0 1 10 100 VR, Reverse Voltage (V) 1000 25 50 75 100 125 150 175 Case Temperature (ºC) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5–5 APTM120SK56T1G – Rev 0 60 500 trr, Reverse Recovery Time (ns) IF, Forward Current (A) 80