DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D302 BAS21VD High-voltage switching diode array Product data sheet 2003 Jul 02 NXP Semiconductors Product data sheet High-voltage switching diode array FEATURES BAS21VD PINNING • Small plastic SMD package PIN • Switching speed: max. 50 ns 1 cathode (k1) • Continuous reverse voltage: max. 200 V 2 cathode (k2) • Repetitive peak reverse voltage: max. 250 V 3 cathode (k3) • Repetitive peak forward current: max. 1 A. 4 anode (a3) 5 anode (a2) 6 anode (a1) APPLICATIONS DESCRIPTION • High-voltage switching in surface mounted circuits • Automotive • Communication. handbook, halfpage 6 5 4 1 2 3 6 5 4 1 2 3 DESCRIPTION The BAS21VD is a high-voltage diode array fabricated in planar technology and encapsulated in a small SOT457 plastic SMD package. MAM473 Marking code: B5. Fig.1 Simplified outline (SOT457) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VRRM repetitive peak reverse voltage − 250 V VR continuous reverse voltage − 200 V IF continuous forward current note 1; see Fig.2 − 200 mA IFRM repetitive peak forward current t = 1 ms; δ = 25% − 1 A IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 10 µs − 16 A t = 100 µs − 8 A t = 10 ms − 2 A − 250 mW Tamb = 25 °C; note 1 Ptot total power dissipation Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Note 1. Pulse test: tp = 300 µs; δ = 0.02. 2003 Jul 02 2 NXP Semiconductors Product data sheet High-voltage switching diode array BAS21VD ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. TYP. UNIT Per diode VF forward voltage IR reverse current see Fig.3 IF = 100 mA − 1 V IF = 200 mA − 1.25 V VR = 200 V; note 1; see Fig.5 25 100 nA VR = 200 V; Tj = 150 °C; note 1 − 100 µA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 0.6 5 pF trr reverse recovery time when switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA; see Fig.8 16 50 ns Note 1. Pulse test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Refer to SOT457 standard mounting conditions. 2003 Jul 02 3 VALUE UNIT 208 K/W NXP Semiconductors Product data sheet High-voltage switching diode array BAS21VD MBG442 300 MBG384 600 handbook, halfpage handbook, halfpage IF (mA) IF (mA) 200 400 100 200 (1) 0 0 0 Tamb (oC) 100 200 1 VF (V) (3) 2 (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on a FR4 printed-circuit board. Fig.2 0 (2) Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 MLE165 2 handbook,10 halfpage Forward current as a function of a forward voltage. MBG381 2 10halfpage handbook, IR (µA) IFSM (A) 10 (1) 1 10 10 (2) 1 10 2 1 1 10 102 103 104 0 105 tp (µA) Tj (oC) 200 (1) VR = VRmax; maximum values. (2) VR = VRmax; typical values. Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 2003 Jul 02 100 Fig.5 4 Reverse current as a function of junction temperature. NXP Semiconductors Product data sheet High-voltage switching diode array BAS21VD MLE166 0.6 MLE167 300 handbook, halfpage handbook, halfpage Cd (pF) VR (V) 0.5 200 0.4 100 0.3 0 0.2 0 10 20 30 40 0 50 100 150 200 Tamb (°C) VR (V) f = 1 MHz; Tj = 25 °C. Fig.7 Fig.6 Diode capacitance as a function of reverse voltage; typical values. handbook, full pagewidth tr Maximum permissible continuous reverse voltage as a function of ambient temperature. tp t D.U.T. R = 50 Ω S V = VR I F x R S IF 10% IF SAMPLING OSCILLOSCOPE t R i = 50 Ω MGA881 (1) 90% VR input signal IR = 3 mA. Fig.8 Reverse recovery voltage test circuit and waveforms. 2003 Jul 02 t rr 5 output signal NXP Semiconductors Product data sheet High-voltage switching diode array BAS21VD PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT457 D E B y A HE 6 X v M A 4 5 Q pin 1 index A A1 c 1 2 3 Lp bp e w M B detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y mm 1.1 0.9 0.1 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.1 OUTLINE VERSION SOT457 2003 Jul 02 REFERENCES IEC JEDEC EIAJ SC-74 6 EUROPEAN PROJECTION ISSUE DATE 97-02-28 01-05-04 NXP Semiconductors Product data sheet High-voltage switching diode array BAS21VD DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2003 Jul 02 7 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp8 Date of release: 2003 Jul 02 Document order number: 9397 750 11417