Transistors SMD Type Medium Power Transistor BCX41 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 SOT23 NPN silicon planar 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-emitter voltage VCES 125 V Collector-emitter voltage VCEO 125 V Emitter-base voltage VEBO 5 V Continuous collector current ICM 1 A Peak pulse current IC 800 mA Base current IB 100 mA Ptot 330 mW Tj,Tstg -55 to +150 Power dissipation Operating and storage temperature range Electrical Characteristics Ta = 25 Parameter Symbol Collector-emitter cut-off current Emitter-base current Max Unit ICES VCE=100V VCE=100V,Tamb = 150 Testconditons 100 10 nA ìA ICEX VCE=100V,VBE=0.2V, Tamb = 85 VCE=100V,VBE=0.2V, Tamb = 125 10 75 ìA ìA IEBO VEB=4V 100 nA 0.9 V 1.4 V Collector-emitter saturation voltage * VCE(sat) IC=300mA, IB=30mA Base-emitter saturation voltage * VBE(sat) IC=300mA, IB=30mA DC current gain * hFE Transitional frequency fT Output capacitance Cobo * Pulse test: tp = 300 ìs; d IC=100ìA,VCE=1V IC=100mA,VCE=1V IC=200mA,VCE=1V Min Typ 25 63 40 IC=10mA, VCE=5V, f=20MHz 100 MHz VCB=10V, f=1MHz,IE=Ie=0 12 pF 0.02. Marking Marking EK www.kexin.com.cn 1