Transistors SMD Type NPN Silicon Planar Medium Power High Gain Transistor FZT690B SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Very low equivalent on-resistance; RCE(sat) 125mÙ at 2A. +0.1 3.00-0.1 Gain of 400 at IC=1 Amp. +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 Features +0.2 0.90-0.2 +0.3 7.00-0.3 4 Very low saturation voltage. 1 1 base 3 2 +0.1 0.70-0.1 2.9 4.6 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 45 V Collector-emitter voltage VCEO 45 V Emitter-base voltage VEBO 5 V IC 3 A Continuous collector current ICM 6 A Power dissipation Ptot 2 W Tj,Tstg -55 to +150 Peak pulse current Operating and storage temperature range www.kexin.com.cn 1 Transistors SMD Type FZT690B Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit V(BR)CBO IC=100ìA 45 V Collector-emitter breakdown voltage * V(BR)CEO IC=10mA 45 V Emitter-base breakdown voltage V(BR)EBO IE=100ìA 5 V Collector Cut-Off Current ICBO VCB=35V 0.1 ìA Emitter Cut-Off Current IEBO VEB=4V 0.1 ìA Collector-emitter saturation voltage * IC=0.1A, IB=0.5mA VCE(sat) IC=1A, IB=5mA 0.1 0.5 V Base-emitter saturation voltage * VBE(sat) IC=1A, IB=10mA 0.9 V Base-Emitter Turn-On Voltage * VBE(on) IC=1A, VCE=2V 0.9 V Static Forward Current Transfer Ratio * Transitional frequency hFE fT IC=100mA, VCE=2V IC=1A, VCE=2V IC=2A, VCE=2V IC=3A, VCE=2V 500 400 100 50 IC=50mA, VCE=5V f=50MHz 150 MHz Input capacitance Cibo VEB=0.5V, f=1MHz 200 pF Output capacitance Cobo VCB=10V, f=1MHz 16 pF Turn-on time t(on) IC=500mA, VCC=10V 33 ns Turn-off time t(off) IB1=50mA,IB2=50mA 1300 ns * Pulse test: tp = 300 ìs; d 0.02. Marking Marking 2 Testconditons Collector-base breakdown voltage FZT690B www.kexin.com.cn