CY62148B MoBL™ 4-Mbit (512K x 8) Static RAM Features is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. This device has an automatic power-down feature that reduces power consumption by more than 99% when deselected. • High Speed: 70 ns • 4.5V–5.5V operation • Low active power — Typical active current: 2.5 mA @ f = 1 MHz — Typical active current: 12.5 mA @ f = fmax(70 ns) • Low standby current • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE and OE features • CMOS for optimum speed/power • Available in standard 32-lead (450-mil) SOIC, 32-lead TSOP II and 32-lead Reverse TSOP II packages Functional Description The CY62148B is a high-performance CMOS static RAM organized as 512K words by 8 bits. Easy memory expansion Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A18). Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH for read. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins. The eight input/output pins (I/O0 through I/O7) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), or during a write operation (CE LOW, and WE LOW). The CY62148B is available in a standard 32-pin 450-mil-wide body width SOIC, 32-pin TSOP II, and 32-pin Reverse TSOP II packages. Logic Block Diagram Pin Configuration Top View SOIC TSOP II A17 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND I/O0 INPUT BUFFER CE I/O1 I/O2 SENSE AMPS ROW DECODER A0 A1 A4 A5 A6 A7 A12 A14 A16 A17 512 K x 8 ARRAY I/O3 I/O4 POWER DOWN A2 A3 A15 A18 A13 A8 A9 A11 A10 OE GND I/O2 I/O1 I/O0 A0 A1 A2 A3 A4 A5 A6 A7 A12 A14 A16 A17 I/O6 I/O7 WE Cypress Semiconductor Corporation Document #: 38-05039 Rev. *C • 198 Champion Court 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 A18 WE A13 A8 A9 A11 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 Top View Reverse TSOP II I/O5 COLUMN DECODER 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 • 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 I/O3 I/O4 I/O5 I/O6 I/O7 CE A10 OE A11 A9 A8 A13 WE A18 A15 Vcc San Jose, CA 95134-1709 • 408-943-2600 Revised August 2, 2006 [+] Feedback CY62148B MoBL™ Product Portfolio Power Dissipation Operating, Icc VCC Range Standby (ISB2) f = fmax Product Min. Typ. Max. Speed CY62148BLL 4.5 V 5.0V 5.5V 70 ns Temp. Com’l Typ. [3] 12.5 mA Max. Typ.[3] Max. 20 mA 4 µA 20 µA Ind’l Maximum Ratings Current into Outputs (LOW)......................................... 20 mA (Above which the useful life may be impaired. For user guidelines, not tested.) Static Discharge Voltage...............................................2001V (per MIL-STD-883, Method 3015) Storage Temperature ................................. –65°C to +150°C Latch-Up Current ..................................................... >200 mA Ambient Temperature with Power Applied............................................. –55°C to +125°C Supply Voltage on VCC to Relative GND........ –0.5V to +7.0V Operating Range DC Voltage Applied to Outputs in High Z State[1] .....................................–0.5V to VCC +0.5V Range Commercial DC Input Voltage[1] ..................................–0.5V to VCC +0.5V Industrial Ambient Temperature[2] VCC 0°C to +70°C 4.5V–5.5V –40°C to +85°C Electrical Characteristics Over the Operating Range CY62148B-70 Parameter Description Test Conditions VOH Output HIGH Voltage VCC = Min., IOH = – 1 mA VOL Output LOW Voltage VCC = Min., IOL = 2.1 mA VIH Input HIGH Voltage VIL Input LOW Voltage IIX Input Leakage Current GND ≤ VI ≤ VCC IOZ Output Leakage Current GND ≤ VI ≤ VCC, Output Disabled ICC VCC Operating Supply Current f = fMAX = 1/tRC ISB1 Automatic CE Power-Down Current —TTL Inputs Max. VCC, CE ≥ VIH VIN ≥ VIH or VIN ≤ VIL, f = fMAX Com/Ind’l ISB2 Automatic CE Power-Down Current —CMOS Inputs Max. VCC, CE ≥ VCC – 0.3V, VIN ≥ VCC – 0.3V, or VIN ≤ 0.3V, f =0 Com/Ind’l f = 1 MHz Com/Ind’l IOUT =0 mA VCC = Max., Min. Typ.[3] Max. 2.4 Unit V 0.4 V 2.2 VCC +0.3 V –0.3 0.8 V –1 +1 µA –1 +1 µA 20 mA 12.5 2.5 4 mA 1.5 mA 20 µA Notes: 1. VIL (min.) = –2.0V for pulse durations of less than 20 ns. 2. TA is the “Instant On” case temperature. 3. Typical values are measured at VCC = 5V, TA = 25°C, and are included for reference only and are not tested or guaranteed. Document #: 38-05039 Rev. *C Page 2 of 11 [+] Feedback CY62148B MoBL™ Capacitance[4] Parameter Description CIN Input Capacitance COUT Output Capacitance Test Conditions TA = 25°C, f = 1 MHz, VCC = 5.0V Max. Unit 6 pF 8 pF AC Test Loads and Waveforms R1 1800 Ω R1 1800Ω 5V ALL INPUT PULSES 5V OUTPUT 100 pF INCLUDING JIG AND SCOPE (a) OUTPUT R2 5 pF 990 Ω INCLUDING JIG AND SCOPE (b) 3.0V 90% R2 990 Ω GND 10% ≤ 3 ns 90% 10% ≤ 3 ns Equivalent to: THEVENIN EQUIVALENT 639 Ω 1.77V OUTPUT Note: 4. Tested initially and after any design or process changes that may affect these parameters. Document #: 38-05039 Rev. *C Page 3 of 11 [+] Feedback CY62148B MoBL™ Switching Characteristics[5] Over the Operating Range 62148BLL-70 Parameter Description Min. Max. Unit READ CYCLE tRC Read Cycle Time 70 tAA Address to Data Valid tOHA Data Hold from Address Change tACE CE LOW to Data Valid 70 ns tDOE OE LOW to Data Valid 35 ns [6] tLZOE OE LOW to Low Z 10 [6] CE LOW to Low Z tHZCE CE HIGH to High Z[6, 7] tPU CE LOW to Power-Up tPD ns 25 10 ns ns 25 0 CE HIGH to Power-Down ns ns 5 OE HIGH to High Z tLZCE WRITE 70 [6, 7] tHZOE ns ns ns 70 ns CYCLE[8] tWC Write Cycle Time 70 ns tSCE CE LOW to Write End 60 ns tAW Address Set-Up to Write End 60 ns tHA Address Hold from Write End 0 ns tSA Address Set-Up to Write Start 0 ns tPWE WE Pulse Width 55 ns tSD Data Set-Up to Write End 30 ns tHD Data Hold from Write End 0 ns tLZWE WE HIGH to Low Z[6] 5 ns tHZWE WE LOW to High Z[6, 7] 25 ns Notes: 5. Test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOL/IOH and 100-pF load capacitance. 6. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 7. tHZOE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage. 8. The internal write time of the memory is defined by the overlap of CE LOW, and WE LOW. CE and WE must be LOW to initiate a write, and the transition of any of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write. Document #: 38-05039 Rev. *C Page 4 of 11 [+] Feedback CY62148B MoBL™ Data Retention Characteristics (Over the Operating Range) Parameter Description VDR VCC for Data Retention ICCDR Data Retention Current Conditions Typ.[3] Max. 2.0 Com’l LL Ind’l tCDR[4] tR[9] Min. No input may exceed VCC + 0.3V VCC = VDR = 3.0V CE > VCC – 0.3V VIN > VCC – 0.3V or VIN < 0.3V LL Chip Deselect to Data Retention Time Operation Recovery Time Unit V 20 µA 20 µA 0 ns tRC ns Data Retention Waveform DATA RETENTION MODE 3.0V VCC 3.0V VDR > 2V tR tCDR CE Switching Waveforms Read Cycle No.1[10, 11] tRC ADDRESS tAA tOHA DATA OUT PREVIOUS DATA VALID DATA VALID Read Cycle No. 2 (OE Controlled)[11, 12] ADDRESS tRC CE tACE OE tHZOE tDOE DATA OUT tLZOE HIGH IMPEDANCE tHZCE DATA VALID tLZCE VCC SUPPLY CURRENT HIGH IMPEDANCE tPD tPU 50% 50% ISB Notes: 9. Full Device operatin requires linear VCC ramp from VDR to VCC(min) > 100 µs or stable at Vcc(min) > 100 µs. 10. Device is continuously selected. OE, CE = VIL. 11. WE is HIGH for read cycle. 12. Address valid prior to or coincident with CE transition LOW. Document #: 38-05039 Rev. *C Page 5 of 11 [+] Feedback CY62148B MoBL™ Switching Waveforms (continued) Write Cycle No. 1 (CE Controlled)[13] tWC ADDRESS tSCE CE tSA tAW tHA tPWE WE tSD DATA I/O tHD DATA VALID Write Cycle No. 2 (WE Controlled, OE HIGH During Write)[13, 14] tWC ADDRESS tSCE CE tHZCE tAW tSA tHA tPWE WE OE tSD DATA I/O tHD DATAIN VALID NOTE 15 tHZOE Notes: 13. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state. 14. Data I/O is high-impedance if OE = VIH. 15. During this period the I/Os are in the output state and input signals should not be applied. Document #: 38-05039 Rev. *C Page 6 of 11 [+] Feedback CY62148B MoBL™ Switching Waveforms (continued) Write Cycle No.3 (WE Controlled, OE LOW)[13, 14] tWC ADDRESS tSCE CE tHZCE tAW tSA tHA tPWE WE tSD NOTE 15 DATAI/O tHD DATA VALID tLZWE tHZWE Truth Table CE OE WE I/O0 – I/O7 Mode Power H X X High Z Power-Down Standby (ISB) L L H Data Out Read Active (ICC) L X L Data In Write Active (ICC) L H H High Z Selected, Outputs Disabled Active (ICC) Ordering Information Speed (ns) 70 Ordering Code Package Diagram Package Type CY62148BLL-70SC 51-85081 32-lead (450-Mil) Molded SOIC CY62148BLL-70ZC 51-85095 32-lead TSOP II CY62148BLL-70ZRC 51-85138 32-lead RTSOP II CY62148BLL-70SI 51-85081 32-lead (450-Mil) Molded SOIC CY62148BLL-70ZI 51-85095 32-lead TSOP II CY62148BLL-70ZRI 51-85138 32-lead RTSOP II Operating Range Commercial Industrial Please contact your local Cypress sales representative for availability of these parts Document #: 38-05039 Rev. *C Page 7 of 11 [+] Feedback CY62148B MoBL™ Package Diagrams 32-lead (450 MIL) Molded SOIC (51-85081) 51-85081-A Document #: 38-05039 Rev. *C Page 8 of 11 [+] Feedback CY62148B MoBL™ Package Diagrams (continued) 32-lead Thin Small Outline Package Type II (51-85095) 51-85095-** All products and company names mentioned in this document may be the trademarks of their respective holders. Document #: 38-05039 Rev. *C Page 9 of 11 [+] Feedback CY62148B MoBL™ Package Diagrams (continued) 32-lead Reverse Thin Small Outline Package Type II (51-85138) 51-85138-** Document #: 38-05039 Rev. *C Page 10 of 11 © Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. [+] Feedback CY62148B MoBL™ Document History Page Document Title: CY62148B 4-Mbit (512K x 8) Static RAM Document Number: 38-05039 REV. ECN NO. Issue Date Orig. of Change ** 106833 05/01/01 SZV Description of Change Change from Spec number 38-01104 to 38-05039 *A 106970 07/16/01 GAV Modified annotations on Pin Configurations; tSD = 30 ns *B 109766 10/09/01 MGN Remove 55-ns devices *C 485639 See ECN VKN Changed address of Cypress Semiconductor Corporation on Page# 1 from “3901 North First Street” to “198 Champion Court” Corrected the typo in the Array size in the Logic Block Diagram on page# 1 Renamed Package Name column with Package Diagram in the Ordering Information Table Document #: 38-05039 Rev. *C Page 11 of 11 [+] Feedback