EXCELICS EFA240D

Excelics
EFA240D
DATA SHEET
Rev.1
Low Distortion GaAs Power FET
•
•
•
•
•
•
410
+31.0dBm TYPICAL OUTPUT POWER
18.5dB TYPICAL POWER GAIN AT 2GHz
0.5 X 2400 MICRON RECESSED “MUSHROOM” GATE
Si3N4 PASSIVATION AND PLATED HEAT SINK
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Idss SORTED IN 40mA PER BIN RANGE
104
D
72
620
155
75
S
100
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
S
94
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
MIN
TYP
Output Power at 1dB Compression
f= 2GHz
Vds=8V, Ids=50% Idss
f= 4GHz
Gain at 1dB Compression
f= 2GHz
Vds=8V, Ids=50% Idss
f= 4GHz
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=2GHz
29.0
31.0
31.0
18.5
13.5
Idss
Saturated Drain Current
Vds=3V, Vgs=0V
400
680
Gm
Transconductance
Vds=3V, Vgs=0V
280
360
Vp
Pinch-off Voltage
Vds=3V, Ids=6mA
BVgd
Drain Breakdown Voltage Igd=2.4mA
-12
-15
V
BVgs
Source Breakdown Voltage Igs=2.4mA
-7
-14
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
P1dB
G1dB
PAE
PARAMETERS/TEST CONDITIONS
G
16.0
MAX
dBm
dB
45
-2.0
%
880
-3.5
23
MAXIMUM RATINGS AT 25 C
PARAMETERS
ABSOLUTE1
mA
mS
O
SYMBOLS
UNIT
CONTINUOUS2
Drain-Source Voltage
12V
8V
Vds
Gate-Source Voltage
-8V
-4V
Vgs
Drain Current
Idss
620mA
Ids
Forward Gate Current
60mA
10mA
Igsf
Input Power
29dBm
@ 3dB Compression
Pin
o
Channel Temperature
175 C
150oC
Tch
o
Storage Temperature
-65/175 C
-65/150oC
Tstg
Total Power Dissipation
6.0 W
5.0 W
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
V
o
C/W
EFA240D
DATA SHEET
Rev.1
Low Distortion GaAs Power FET
S-PARAMETERS
FREQ
(GHz)
0.500
1.000
1.500
2.000
2.500
3.000
3.500
4.000
4.500
5.000
5.500
6.000
6.500
7.000
7.500
8.000
8.500
9.000
9.500
10.000
Note:
8V, 1/2 Idss
--- S11 ----- S21 --MAG ANG MAG ANG
0.950 -75.6 11.303 136.8
0.906 -116.5 7.670 113.0
0.888 -138.2 5.566
99.1
0.880 -151.5 4.317
89.4
0.877 -160.7 3.510
81.6
0.875 -167.7 2.952
74.9
0.875 -173.3 2.544
68.8
0.876 -178.1 2.233
63.2
0.877 177.7 1.989
57.8
0.879 173.9 1.792
52.7
0.881 170.4 1.630
47.8
0.883 167.1 1.493
43.0
0.885 164.1 1.377
38.3
0.887 161.1 1.276
33.7
0.890 158.4 1.188
29.2
0.893 155.7 1.109
24.8
0.896 153.1 1.040
20.5
0.899 150.6 0.977
16.2
0.902 148.1 0.920
12.1
0.905 145.7 0.867
8.0
--- S12 --MAG
ANG
0.027
53.1
0.036
35.5
0.040
27.9
0.041
24.4
0.042
22.9
0.043
22.5
0.043
22.6
0.044
23.2
0.045
24.1
0.046
25.1
0.046
26.3
0.047
27.5
0.048
28.7
0.050
30.0
0.051
31.2
0.052
32.3
0.054
33.4
0.056
34.4
0.058
35.3
0.060
36.0
--- S22 --MAG ANG
0.195 -119.8
0.264 -142.3
0.290 -152.3
0.303 -157.5
0.312 -160.6
0.321 -162.6
0.329 -164.0
0.338 -165.0
0.347 -165.9
0.356 -166.7
0.366 -167.5
0.377 -168.3
0.389 -169.1
0.400 -169.9
0.413 -170.8
0.426 -171.8
0.439 -172.9
0.453 -174.0
0.467 -175.2
0.481 -176.5
The data included 0.7 mils diameter Au bonding wires:
1 gate wires, 20 mils each; 1 drain wires, 12 mils each; 4 source wires, 7 mils each.