EXCELICS EFA040A

Excelics
EFA040A
DATA SHEET
Low Distortion GaAs Power FET
•
•
•
•
•
•
+23.0dBm TYPICAL OUTPUT POWER
10.5 dB TYPICAL POWER GAIN AT 12GHz
0.3 X 400 MICRON RECESSED “MUSHROOM” GATE
Si3N4 PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Idss SORTED IN 10mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
P1dB
G1dB
PAE
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
f=18GHz
f=12GHz
f=18GHz
'
6
*
6
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
MIN
TYP
21.0
23.0
23.0
10.5
8.0
9.0
f=12GHz
MAX
UNIT
dBm
dB
%
35
Idss
Saturated Drain Current
Vds=3V, Vgs=0V
60
105
Gm
Transconductance
Vds=3V, Vgs=0V
45
60
Vp
Pinch-off Voltage
Vds=3V, Ids=1.0 mA
BVgd
Drain Breakdown Voltage Igd=1.0mA
-12
-15
V
BVgs
Source Breakdown Voltage Igs=1.0mA
-7
-14
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
-2.0
160
mS
-3.5
105
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
ABSOLUTE1
mA
CONTINUOUS2
Drain-Source Voltage
12V
8V
Vds
Gate-Source
Voltage
-8V
-4V
Vgs
Drain Current
Idss
135mA
Ids
Forward Gate Current
10mA
2mA
Igsf
Input Power
22dBm
@ 3dB Compression
Pin
o
Channel Temperature
175 C
150oC
Tch
o
Storage Temperature
-65/175 C
-65/150oC
Tstg
Total Power Dissipation
1.3W
1.1W
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
V
o
C/W
EFA040A
DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
8V, 1/2 Idss
--- S21 --MAG ANG
4.677 163.5
4.457 149.3
4.164 135.7
3.845 123.2
3.529 111.1
3.204 100.9
2.914
91.6
2.663
83.2
2.442
75.5
2.258
68.4
2.115
61.5
1.985
54.8
1.880
48.1
1.799
41.4
1.721
34.6
1.652
27.4
1.583
19.9
1.510
12.5
1.436
5.0
1.358
-2.3
1.218
-8.6
1.144 -14.9
1.073 -20.7
1.012 -26.4
0.965 -31.9
0.915 -36.9
FREQ
(GHz)
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
--- S11 --MAG ANG
0.989 -21.4
0.970 -41.5
0.942 -60.3
0.915 -77.6
0.888 -94.0
0.870 -107.0
0.856 -118.1
0.846 -127.2
0.840 -135.1
0.834 -142.0
0.833 -148.6
0.829 -154.2
0.828 -160.2
0.826 -166.5
0.823 -173.0
0.824 180.0
0.823 172.7
0.822 165.6
0.824 159.0
0.827 153.0
0.845 151.3
0.853 148.1
0.859 145.0
0.862 143.0
0.870 141.1
0.866 139.5
--- S12 --MAG ANG
0.019
78.1
0.036
67.0
0.049
56.3
0.060
47.3
0.068
38.6
0.072
32.1
0.075
27.0
0.077
21.2
0.078
16.6
0.077
13.1
0.078
10.0
0.078
6.9
0.078
3.7
0.079
1.1
0.079
-1.5
0.080
-4.8
0.082
-7.8
0.082 -10.9
0.082 -13.6
0.083 -16.4
0.078 -18.8
0.076 -20.1
0.076 -19.7
0.073 -20.1
0.074 -18.3
0.074 -17.5
--- S22 --MAG
ANG
0.665
-7.4
0.646
-15.3
0.615
-22.4
0.584
-29.1
0.550
-36.2
0.526
-42.3
0.508
-48.4
0.496
-54.3
0.487
-60.1
0.482
-65.4
0.478
-70.9
0.476
-76.3
0.471
-81.7
0.465
-86.7
0.457
-92.5
0.446
-98.7
0.434 -106.0
0.422 -114.2
0.412 -123.8
0.409 -134.1
0.445 -148.8
0.467 -158.9
0.496 -166.3
0.533 -173.2
0.565 -179.5
0.595
176.0
Note:
The data included 0.7 mils diameter Au bonding wires:
1 gate wires, 15 mils each; 1 drain wires, 20 mils each; 4 source wires, 7 mils each.