fdfma3n109 - Fairchild Semiconductor

July 2014
FDFMA3N109
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
General Description
Features
This device is designed specifically as a single package
MOSFET:
• 2.9 A, 30 V RDS(ON) = 123 mΩ @ VGS = 4.5 V
solution for a boost topology in cellular handset and
RDS(ON) = 140 mΩ @ VGS = 3.0 V
other ultra-portable applications. It features a MOSFET
RDS(ON) = 163 mΩ @ VGS = 2.5 V
with low input capacitance, total gate charge and onstate resistance, and an independently connected
schottky diode with low forward voltage and reverse
leakage current to maximize boost efficiency.
The MicroFET 2x2 package offers exceptional thermal
performance for its physical size and is well suited to
switching and linear mode applications.
PIN 1
A NC
K
K
PD
TJ, TSTG
VRRM
IO
• RoHS Compliant
A
1
6 K
NC
2
5 G
D
3
4 S
D
G
MicroFET 2x2
Symbol
• Low profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
• HBM ESD protection level = 1.8kV typical (Note 3)
D
S
Absolute Maximum Ratings
VDS
VGS
ID
Schottky:
• VF < 0.46 V @ 500mA
TA=25oC unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous (TC = 25°C, VGS = 4.5V)
– Continuous (TC = 25°C, VGS = 2.5V)
– Pulsed
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Temperature
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
Ratings
30
(Note 1a)
(Note 1b)
Thermal Characteristics
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
109
©2008 Fairchild Semiconductor Corporation
Device
FDFMA3N109
Reel Size
7’’
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
±12
2.9
2.7
10
1.5
0.65
–55 to +150
28
1
83
193
101
228
Tape width
8mm
Units
V
V
A
W
°C
V
A
°C/W
Quantity
3000 units
FDFMA3N109 Rev B3
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
RDS(on)
V
ID = 250 µA
VGS = 0 V,
ID = 250 µA, Referenced to 25°C
Zero Gate Voltage Drain Current
VDS = 24 V,
VGS = 0 V
1
µA
Gate–Body Leakage Current
VGS = ± 12 V,
VDS = 0 V
±10
µA
1.5
V
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = 250 µA
VDS = VGS,
ID = 250 µA, Referenced to 25°C
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
RG
Reverse Transfer Capacitance
Gate Resistance
Switching Characteristics
25
0.4
1.0
mV/°C
–3
mV/°C
VGS = 4.5V, ID = 2.9A
VGS = 3.0V, ID = 2.7A
VGS = 2.5V, ID = 2.5A
VGS = 4.5V, ID = 2.9A, TC = 85°C
VGS = 3.0V, ID = 2.7A, TC = 150°C
VGS = 2.5V, ID = 2.5A, TC = 150°C
75
84
92
95
138
150
123
140
163
166
203
268
mΩ
VDS = 15 V,
f = 1.0 MHz
190
220
pF
30
40
pF
20
4.6
30
pF
6
12
ns
ns
Dynamic Characteristics
td(on)
30
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
Min Typ Max Units
V GS = 0 V,
V GS = 0 V,
f = 1.0 MHz
VDD = 15 V,
VGS = 4.5 V,
ID = 1 A,
RGEN = 6 Ω
Ω
(Note 2)
Turn–On Delay Time
tr
Turn–On Rise Time
8
16
td(off)
Turn–Off Delay Time
12
21
ns
tf
Turn–Off Fall Time
2
4
ns
2.4
3.0
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = 15 V,
VGS = 4.5 V
ID = 2.9 A,
nC
0.75
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
IS = 2.0 A
IS = 1.1 A
IF = 2.9 A,
dIF/dt = 100 A/µs
0.9
0.8
10
2.9
A
1.2
1.2
V
ns
2
Schottky Diode Characteristics
IR
Reverse Leakage
VR = 28 V
TJ = 25°C
TJ = 85°C
VF
Forward Voltage
IF = 1 A
TJ = 25°C
TJ = 85°C
VF
Forward Voltage
IF = 500 mA
TJ = 25°C
TJ = 85°C
nC
0.35
nC
10
100
0.07
0.50
0.49
0.40
0.36
4.7
0.57
0.60
0.46
0.43
µA
mA
V
V
FDFMA3N109 Rev B3
FDFMA3N109 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
Electrical Characteristics
TA = 25°C unless otherwise noted
Notes:
1. RθJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is
determined by the user's board design.
2
(a) MOSFET RθJA = 83°C/W when mounted on a 1in pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB
(b) MOSFET RθJA = 193°C/W when mounted on a minimum pad of 2 oz copper
2
(c) Schottky RθJA = 101°C/W when mounted on a 1in pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB
(d) Schottky RθJA = 228°C/W when mounted on a minimum pad of 2 oz copper
a) 83oC/W
when
mounted on
a 1in2 pad
of 2 oz
copper
b) 193oC/W
when
mounted on
a minimum
pad of
2 oz copper
c)101 oC/W
when
mounted on
a 1in2 pad
of 2 oz
copper
b) 228oC/W
when
mounted on
a minimum
pad of
2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
FDFMA3N109 Rev B3
FDFMA3N109 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
Electrical Characteristics
1.8
10
ID, DRAIN CURRENT (A)
8
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.5V
VGS = 4.5V
2.7V
3.5V
6
2.9V
2.0V
4
2
1.5V
0
0
0.5
1
1.5
2
VDS, DRAIN-SOURCE VOLTAGE (V)
2.5
VGS = 2.0V
1.6
1.4
0
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4.5V
2
4
6
ID, DRAIN CURRENT (A)
8
10
ID = 1.45A
1
0.8
0.6
0
25
50
75
100
o
TJ, JUNCTION TEMPERATURE ( C)
125
0.2
0.16
o
TA = 125 C
0.12
0.08
o
TA = 25 C
0.04
150
0
Figure 3. On-Resistance Variation with
Temperature.
2
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
100
o
TA = -55 C
VGS = 0V
o
125 C
8
-IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
ID, DRAIN CURRENT (A)
4.0V
0.24
1.2
-25
3.5V
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.4
-50
2.9V
0.8
3
ID = 2.9A
VGS = 4.5V
1.6
2.7V
1
Figure 1. On-Region Characteristics.
1.8
2.5V
1.2
25oC
6
4
2
0
0.5
1
1.5
2
2.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
10
1
0.1
o
TA = 125 C
0.01
25oC
-55oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.6
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDFMA3N109 Rev B3
FDFMA3N109 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
Typical Characteristics
300
10
f = 1MHz
VGS = 0 V
250
8
VDS = 10V
20V
6
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
ID = 2.9A
15V
4
200
Ciss
150
100
2
50
0
0
Coss
Crss
0
1
2
3
4
Qg, GATE CHARGE (nC)
5
0
6
Figure 7. Gate Charge Characteristics.
30
0.1
IR, REVERSE LEAKAGE CURRENT (A)
IF, FORWARD LEAKAGE CURRENT (A)
10
15
20
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
10
1
o
TJ = 125 C
o
0.1
TJ = 25 C
0.01
0.001
0
0.1
0.2
0.3
0.4
0.5
0.6
VF, FORWARD VOLTAGE (V)
0.7
0.8
Figure 9. Schottky Diode Forward Voltage.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
5
o
TJ = 125 C
0.01
0.001
o
TJ = 100 C
0.0001
0.00001
o
TJ = 25 C
0.000001
0
5
10
15
20
VR, REVERSE VOLTAGE (V)
25
30
Figure 10. Schottky Diode Reverse Current.
1
RθJA(t) = r(t) * RθJA
RθJA =193°C/W
D = 0.5
0.2
0.1
P(pk)
0.1
0.05
t1
0.02
0.01
SINGLE PULSE
0.01
0.0001
0.001
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDFMA3N109 Rev B3
FDFMA3N109 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
Typical Characteristics
FDFMA3N109 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
Dimensional Outline and Pad Layout
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_MLDEB-X06
FDFMA3N109 Rev B3
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I68
FDFMA3N109 Rev B3
FDFMA3N109 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
F-PFS™
®*
®
AX-CAP®*
FRFET®
®
SM
BitSiC™
Global Power Resource
PowerTrench
TinyBoost®
GreenBridge™
PowerXS™
Build it Now™
TinyBuck®
Programmable Active Droop™
CorePLUS™
Green FPS™
TinyCalc™
®
QFET
CorePOWER™
Green FPS™ e-Series™
TinyLogic®
CROSSVOLT™
QS™
Gmax™
TINYOPTO™
CTL™
Quiet Series™
GTO™
TinyPower™
Current Transfer Logic™
RapidConfigure™
IntelliMAX™
TinyPWM™
DEUXPEED®
ISOPLANAR™
™
TinyWire™
Dual Cool™
Marking Small Speakers Sound Louder
TranSiC™
Saving our world, 1mW/W/kW at a time™
EcoSPARK®
and Better™
TriFault Detect™
SignalWise™
EfficentMax™
MegaBuck™
TRUECURRENT®*
SmartMax™
ESBC™
MICROCOUPLER™
μSerDes™
SMART START™
MicroFET™
®
Solutions for Your Success™
MicroPak™
SPM®
MicroPak2™
Fairchild®
UHC®
STEALTH™
MillerDrive™
Fairchild Semiconductor®
Ultra FRFET™
SuperFET®
MotionMax™
FACT Quiet Series™
UniFET™
SuperSOT™-3
mWSaver®
FACT®
®
VCX™
OptoHiT™
SuperSOT™-6
FAST
®
VisualMax™
OPTOLOGIC
SuperSOT™-8
FastvCore™
®
®
VoltagePlus™
OPTOPLANAR
SupreMOS
FETBench™
SyncFET™
XS™
FPS™
Sync-Lock™
仙童 ™