IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Low Gate Charge Qg results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance Avalanche Voltage and Current Available RoHS* COMPLIANT and • Effective Coss Specified Single • Lead (Pb)-free Available D D2PAK (TO-263) APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply G • High Speed Power Switching G D TYPICAL SMPS TOPOLOGIES S S • Single Transistor Forward N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) IRFBC40ASPbF IRFBC40ASTRLPbFa IRFBC40ASTRRPbFa SiHFBC40AS-E3 SiHFBC40ASTL-E3a SiHFBC40ASTR-E3a IRFBC40AS IRFBC40ASTRLa IRFBC40ASTRRa SiHFBC40AS SiHFBC40ASTLa SiHFBC40ASTRa Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ± 30 Continuous Drain Currente VGS at 10 V TC = 25 °C ID TC = 100 °C Pulsed Drain Currenta, e UNIT V 6.2 3.9 A IDM 25 1.0 W/°C Single Pulse Avalanche Energyb EAS 570 mJ Repetitive Avalanche Currenta IAR 6.2 A Repetitive Avalanche Energya EAR 13 mJ Linear Derating Factor Maximum Power Dissipation TC = 25 °C PD 125 W dV/dt 6.0 V/ns TJ, Tstg - 55 to + 150 Peak Diode Recovery dV/dtc, e Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s 300d °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 29.6 mH, RG = 25 Ω, IAS = 6.2 A (see fig. 12). c. ISD ≤ 6.2 A, dI/dt ≤ 88 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. Uses IRFBC40A/SiHFBC40A data and test conditions. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91113 S-Pending-Rev. A, 23-Jun-08 WORK-IN-PROGRESS www.vishay.com 1 IRFBC40AS, SiHFBC40AS Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 40 Maximum Junction-to-Case (Drain) RthJC - 1.0 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. VDS VGS = 0 V, ID = 250 µA TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance ΔVDS/TJ VGS(th) Reference to 25 °C, ID = 1 VDS = VGS, ID = 250 µA IGSS IDSS RDS(on) gfs mAd 600 - - V - 0.66 - V/°C 2.0 - 4.0 V nA VGS = ± 30 V - - ± 100 VDS = 600 V, VGS = 0 V - - 25 VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 250 - - 1.2 Ω VDS = 50 V, ID = 3.7 A 3.4 - - S VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 1036 - - 136 - - 7.0 - VDS = 1.0 V, f = 1.0 MHz - 1487 - VDS = 480 V, f = 1.0 MHz - 36 - - 48 - - - 42 ID = 3.7 Ab VGS = 10 V µA Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Output Capacitance Coss Output Capacitance Effective VGS = 0 V Coss eff. VDS = 0 V to 480 Vc Total Gate Charge Qg Gate-Source Charge Qgs - - 10 Gate-Drain Charge Qgd - - 20 Turn-On Delay Time td(on) - 13 - - 23 - - 31 - - 18 - - - 6.2 - - 25 Rise Time Turn-Off Delay Time Fall Time tr td(off) VGS = 10 V ID = 6.2 A, VDS = 480 V, see fig. 6 and 13b VDD = 300 V, ID = 6.2 A, RG = 9.1 Ω, RD = 47 Ω, see fig. 10b tf pF nC ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage IS ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IS = 6.2 A, VGS = 0 S Vb TJ = 25 °C, IF = 6.2 A, dI/dt = 100 A/µsb - - 1.5 V - 431 647 ns - 1.8 2.8 µC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. COSS eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising fom 0 to 80 % VDS. d. Uses IRHFBC40A/SiHFBC40A data and test conditions. www.vishay.com 2 Document Number: 91113 S-Pending-Rev. A, 23-Jun-08 IRFBC40AS, SiHFBC40AS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Output Characteristics Document Number: 91113 S-Pending-Rev. A, 23-Jun-08 Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 IRFBC40AS, SiHFBC40AS Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Document Number: 91113 S-Pending-Rev. A, 23-Jun-08 IRFBC40AS, SiHFBC40AS Vishay Siliconix RD VDS VGS D.U.T. RG + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS 15 V tp L VDS D.U.T RG IAS 20 V tp Driver + A - VDD IAS 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91113 S-Pending-Rev. A, 23-Jun-08 Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5 IRFBC40AS, SiHFBC40AS Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12d - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG 10 V 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91113 S-Pending-Rev. A, 23-Jun-08 IRFBC40AS, SiHFBC40AS Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - • • • • RG dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test Driver gate drive P.W. + Period D= + - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Body diode VDD forward drop Inductor current Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91113. Document Number: 91113 S-Pending-Rev. A, 23-Jun-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1