Si4405DY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) - 30 0.0075 @ VGS = - 10 V - 17 D TrenchFETr Power MOSFETS D 100% Rg Tested APPLICATIONS D Battery and Load Switching - Notebook Computers - Notebook Battery Packs S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D Ordering Information: Si4405DY Si4405DY-T1 (with Tape and Reel) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C V - 11 - 17 ID TA = 70_C Pulsed Drain Current - 13 IDM continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa Unit TA = 70_C Operating Junction and Storage Temperature Range PD -9 A - 60 - 2.9 - 1.30 3.5 1.6 2.1 1.0 TJ, Tstg W _C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Steady State Steady State RthJA RthJF Typical Maximum 29 35 67 80 13 16 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71913 S-31726—Rev. D, 18-Aug-03 www.vishay.com 1 Si4405DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = - 250 mA - 1.0 Typ Max Unit - 3.0 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta Drain-Source On-State Resistancea VDS = 0 V, VGS = "20 V VDS = - 24 V, VGS = 0 V -1 VDS = - 24 V, VGS = 0 V, TJ = 70_C - 10 ID(on) VDS = - 5 V, VGS = - 10 V rDS(on) VGS = - 10 V, ID = - 17 A 0.006 gfs VDS = - 15 V, ID = - 17 A 47 VSD IS = - 2.9 A, VGS = 0 V - 0.75 - 1.1 105 160 VDS = - 15 V, VGS = - 10 V, ID = - 17 A 17.5 Forward Transconductancea Diode Forward Voltagea mA - 30 A W 0.0075 S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time 29.5 3 td(on) Rise Time tr Turn-Off Delay Time VDD = - 15 V, RL = 15 W ID ^ - 1 A, VGEN = - 10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC IF = - 2.9 A, di/dt = 100 A/ms 4 6.5 25 40 15 25 190 285 80 120 70 110 W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 60 60 VGS = 10 thru 5 V 50 I D - Drain Current (A) I D - Drain Current (A) 50 40 4V 30 20 10 40 30 20 TC = 125_C 10 25_C - 55_C 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) Document Number: 71913 S-31726—Rev. D, 18-Aug-03 Si4405DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 7000 0.008 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 0.010 VGS = 10 V 0.006 0.004 5600 Ciss 4200 2800 Coss 0.002 1400 Crss 0.000 0 0 10 20 30 40 50 0 6 ID - Drain Current (A) Gate Charge 24 30 On-Resistance vs. Junction Temperature 1.6 VDS = 15 V ID = 17 A r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 18 VDS - Drain-to-Source Voltage (V) 10 8 6 4 VGS = 10 V ID = 17 A 1.4 1.2 1.0 2 0 0 22 44 66 88 0.8 - 50 110 - 25 0 Qg - Total Gate Charge (nC) Source-Drain Diode Forward Voltage 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 1 TJ = 25_C 0.1 0.0 50 0.030 r DS(on) - On-Resistance ( W ) 10 25 TJ - Junction Temperature (_C) 60 I S - Source Current (A) 12 ID = 17 A 0.020 0.010 0.000 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Document Number: 71913 S-31726—Rev. D, 18-Aug-03 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si4405DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.4 60 ID = 250 mA 50 40 - 0.0 Power (W) V GS(th) Variance (V) 0.2 - 0.2 30 - 0.4 20 - 0.6 10 - 0.8 - 50 - 25 0 25 50 75 100 125 0 10 -2 150 10 -1 TJ - Temperature (_C) 1 10 100 600 Time (sec) Safe Operating Area, Junction-to-Case 100 1 ms Limited by rDS(on) I D - Drain Current (A) 10 10 ms 1 100 ms 1s 0.1 10 s TC = 25_C Single Pulse dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 67_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 www.vishay.com 4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71913 S-31726—Rev. D, 18-Aug-03 Si4405DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 Document Number: 71913 S-31726—Rev. D, 18-Aug-03 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5