Si4463BDY Vishay Siliconix New Product P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.011 @ VGS = −10 V −13.7 0.014 @ VGS = −4.5 V −12.3 0.020 @ VGS = −2.5 V −10.3 −20 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D Ordering Information: Si4463BDY—E3 (Lead Free) Si4463BDY-T1—E3 (Lead Free with Tape and Reel) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS −20 Gate-Source Voltage VGS "12 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD V −13.7 −9.8 −11.1 −7.9 IDM −50 −2.7 A −1.36 3.0 1.5 1.9 0.95 TJ, Tstg Unit −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJF Typical Maximum 35 42 70 84 17 21 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72789 S-40433—Rev. A, 15-Mar-04 www.vishay.com 1 Si4463BDY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = −250 mA −0.6 Typ Max Unit −1.4 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Voltagea VDS = −20 V, VGS = 0 V −1 VDS = −20 V, VGS = 0 V, TJ = 70_C −10 VDS = −5 V, VGS = −4.5 V −30 mA A VGS = −10 V, ID = −13.7 A 0.0085 0.011 VGS = −4.5 V, ID = −12.3 A 0.010 0.014 VGS = −2.5 V, ID = −5 A 0.015 0.020 gfs VDS = −10 V, ID = −13.7 A 44 VSD IS = −2.7 A, VGS = 0 V −0.7 −1.1 37 56 rDS(on) Forward Transconductancea Diode Forward VDS = 0 V, VGS = "12 V W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance VDS = −10 V, VGS = −4.5 V, ID = −13.7 A f = 1 MHz 2.7 td(on) Rise Time tr Turn-Off Delay Time VDD = −10 V, RL = 10 W ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC 11 Rg Turn-On Delay Time 8.7 IF = −2.3 A, di/dt = 100 A/ms W 35 55 60 90 115 170 75 115 50 75 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 50 50 VGS = 10 thru 2.5 V 40 I D − Drain Current (A) I D − Drain Current (A) 40 30 2V 20 10 30 20 TC = 125_C 10 25_C 1.5 V 0 0 1 2 3 4 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 5 0 0.0 −55_C 0.5 1.0 1.5 2.0 2.5 VGS − Gate-to-Source Voltage (V) Document Number: 72789 S-40433—Rev. A, 15-Mar-04 Si4463BDY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 5000 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0.04 0.03 0.02 VGS = 2.5 V VGS = 4.5 V 0.01 4000 Ciss 3000 2000 Coss 1000 VGS = 10 V Crss 0.00 0 0 10 20 30 40 50 0 4 ID − Drain Current (A) Gate Charge 16 20 On-Resistance vs. Junction Temperature 1.4 VDS = 10 V ID = 13.7 A VGS = 10 V ID = 13.7 A 1.3 4 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 12 VDS − Drain-to-Source Voltage (V) 5 3 2 1 1.2 1.1 1.0 0.9 0 0 5 10 15 20 25 30 35 0.8 −50 40 −25 Qg − Total Gate Charge (nC) Source-Drain Diode Forward Voltage 25 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.05 r DS(on) − On-Resistance ( W ) ID = 5 A TJ = 150_C 10 TJ = 25_C 1 0.0 0 TJ − Junction Temperature (_C) 50 I S − Source Current (A) 8 0.04 ID = 13.7 A 0.03 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) Document Number: 72789 S-40433—Rev. A, 15-Mar-04 1.2 0 1 2 3 4 5 6 7 8 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si4463BDY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Single Pulse Power, Junction-to-Ambient 50 0.4 40 ID = 250 mA 0.2 30 Power (W) V GS(th) Variance (V) Threshold Voltage 0.6 0.0 20 10 −0.2 −0.4 −50 −25 0 25 50 75 100 125 0 0.01 150 0.1 1 TJ − Temperature (_C) 10 100 600 Time (sec) Safe Operating Area 100 IDM Limited rDS(on) Limited I D − Drain Current (A) 10 1 P(t) = 0.001 P(t) = 0.01 ID(on) Limited P(t) = 0.1 P(t) = 1 0.1 P(t) = 10 TC = 25_C Single Pulse dc BVDSS Limited 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 70_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72789 S-40433—Rev. A, 15-Mar-04 Si4463BDY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 Document Number: 72789 S-40433—Rev. A, 15-Mar-04 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5