Si4942DY Vishay Siliconix Dual N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.021 @ VGS = 10 V 7.4 0.028 @ VGS = 4.5 V 6.4 APPLICATIONS D Low Power Synchronous Rectifier D Automotive 12-V Systems D1 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View Ordering Information: Si4942DY Si4942DY-T1 (with Tape and Reel) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 40 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current Avalanche Current L = 0.1 mH Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range 5.3 5.8 4.3 IDM 30 IAS 25 IS TA = 25_C V 7.4 ID PD A 1.8 0.9 2.1 1.1 1.3 0.7 TJ, Tstg Unit W _C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Steady State Steady State RthJA RthJF Typical Maximum 50 60 90 110 28 34 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71887 S-03950—Rev. B, 16-May-03 www.vishay.com 1 Si4942DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS Typ Max Unit 3 V VDS = 0 V, VGS = "20 V "100 nA VDS = 32 V, VGS = 0 V 1 VDS = 32 V, VGS = 0 V, TJ = 55_C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea VDS w 5 V, VGS = 10 V rDS(on) Forward Transconductancea Diode Forward Voltagea 30 mA A VGS = 10 V, ID = 7.4 A 0.017 0.021 VGS = 4.5 V, ID = 6.4 A 0.023 0.028 gfs VDS = 15 V, ID = 7.4 A 25 VSD IS = 1.8 A, VGS = 0 V 0.75 1.1 21 32 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance RG Turn-On Delay Time Rise Time Turn-Off Delay Time VDS = 20 V, VGS = 10 V, ID = 5.7 A 3.3 nC 5.8 0.5 1.1 1.6 td(on) 13 20 tr 10 15 31 50 11 20 30 60 VDD = 20 V, RL = 20 W ID ^ 1 A, VGEN = 10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr IF = 1.8 A, di/dt = 100 A/ms W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 30 30 VGS = 10 thru 5 V 25 4V I D - Drain Current (A) I D - Drain Current (A) 25 20 15 10 5 20 15 10 TC = 125_C 5 25_C 3V - 55_C 0 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 5 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Document Number: 71887 S-03950—Rev. B, 16-May-03 Si4942DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 1600 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 0.040 0.030 VGS = 4.5 V 0.020 VGS = 10 V 1280 Ciss 960 640 0.010 Coss 320 0.000 Crss 0 0 5 10 15 20 25 30 0 8 ID - Drain Current (A) Gate Charge 32 40 On-Resistance vs. Junction Temperature 1.8 VDS = 20 V ID = 5.7 A r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 24 VDS - Drain-to-Source Voltage (V) 10 8 6 4 2 1.6 VGS = 10 V ID = 7.4 A 1.4 1.2 1.0 0.8 0 0 5 10 15 20 0.6 - 50 25 - 25 0 Qg - Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.10 r DS(on) - On-Resistance ( W ) 10 TJ = 150_C 1 TJ = 25_C 0.1 0.0 25 TJ - Junction Temperature (_C) 30 I S - Source Current (A) 16 0.08 0.06 ID = 7.4 A 0.04 0.02 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Document Number: 71887 S-03950—Rev. B, 16-May-03 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si4942DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.6 50 0.4 40 ID = 250 mA - 0.0 Power (W) V GS(th) Variance (V) 0.2 - 0.2 30 20 - 0.4 - 0.6 10 - 0.8 - 1.0 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 1 0.1 TJ - Temperature (_C) 10 100 600 Time (sec) Safe Operating Area 100 Limited by rDS(on) 1 mS I D - Drain Current (A) 10 10 mS 1 100 mS 0.1 TA = 25_C Single Pulse 1S 10 S dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 90_C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 www.vishay.com 4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71887 S-03950—Rev. B, 16-May-03 Si4942DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 Document Number: 71887 S-03950—Rev. B, 16-May-03 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5