2SA1 1 62 TRANSISTOR(PNP) SOT-23 FEATURES . Low noise : NF= 1dB(Typ.),10dB (Max.) . Complementary to 2SC2712. . Small Package. 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Current -Continuous -150 mA PD Collector Power Dissipation 150 mW TJ Junction Temperature 125 ℃ Tstg Storage Temperature -55-125 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Parameter Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100u A,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-100 u A,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -0.1 uA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 uA DC current gain hFE VCE=-6V,IC=-2mA VCE(sat) Collector-emitter saturation voltage fT Transition frequency Collector output capacitance Cob Noise figure NF CLASSIFICATION OF Rank Range 70 IC=-100mA,IB=-10mA VCE=-10V,IC=-1mA 400 -0.3 80 VCB=-10V,IE=0,f=1MHz VCE=-6V,Ic=0.1mA, f=1KHZ,Rg=10KΩ MHz 7 pF 10 dB hFE O Y GR(G) 70-140 120-240 200-400 １ JinYu semiconductor V www.htsemi.com Ｄａｔｅ：２０１１／０５ 2SA1 1 62 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５