2SB1 440 TRANSISTOR(PNP) SOT-89 1. BASE FEATURES z Low collector-emitter saturation voltage VCE(sat) For low-frequency output amplification z Complementary to 2SD2185 z 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -2 A PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10μA, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA, IC=0 -5 V Collector cut-off current ICBO VCB=-50V, IE=0 -1 μA Emitter cut-off current IEBO VEB=-5V, IC=0 -1 μA hFE1 VCE=-2V, IC=-200mA 120 hFE2 VCE=-2V, IC=-1A 60 340 DC current gain Collector-emitter saturation voltage VCE(sat) IC=-1A, IB=-50mA -0.3 V Base- emitter saturation voltage VBE(sat) IC=-1A, IB=-50mA -1..2 V fT Transition frequency Collector output capacitance CLASSIFICATION OF Rank Range VCE=-10V, IC=50mA, f=200MHz Cob 80 VCB=-10V, IE=0, f=1MHz MHz 60 hFE1 R S 120-240 170-340 1L Marking １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ pF 2SB1 440 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５