KTC4375 TRANSISTOR (NPN) SOT-89 FEATURES Low voltage 1. BASE 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 1 2 3. EMITTER Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Parameter Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=1mA,IC=0 5 V Collector cut-off current ICBO VCB=30V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA DC current gain hFE VCE=2V,IC=0.5A Collector-emitter saturation voltage VCE(sat) Base-emitter voltage VBE Transition frequency fT Collector output capacitance CLASSIFICATION OF Rank Range Marking 100 320 IC=1.5A,IB=30mA 2 V VCE=2V,IC=0.5A 1 V VCE=2V,IC=500mA Cob 120 VCB=10V,IE=0,f=1MHz MHz 40 hFE(1) O Y 100-200 160-320 GO GY １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ pF KTC4375 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５