KSA1182 TRANSISTOR (PNP) SOT-23 FEATURES Complement to KSC2859 1. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 2. EMITTER Value Units VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 150 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless Test 3. COLLECTOR otherwise conditions specified) MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100μA, IE=0 -35 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V Collector cut-off current ICBO VCB=-35V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 μA hFE(1) VCE=-1V, IC=-100mA 70 hFE(2) VCE=-6V, IC=-400mA 25 240 DC current gain Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB=-10mA -0.25 V -1.0 V Base-emitter voltage VBE VCE=-1V, IC=-100mA Transition frequency fT VCE=-6V, IC=-20mA 200 MHz VCB=-6V, IE=0, f=1MHz 13 pF Collector output capacitance CLASSIFICATION OF Rank Range Marking Cob hFE(1) O Y 70-140 120-240 F1O F1Y １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ KSA1182 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５