2SB1 1 97 TRANSISTOR(PNP) SOT-23 Unit : mm 1. BASE FEATURES z Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA) z IC =-0.8A. Complements the 2SD1781. z 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.8 A PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Parameter Test conditions Collector-base breakdown voltage V(BR)CBO IC =-50μA, Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage MIN TYP MAX UNIT -40 V IC = -1mA, IB=0 -32 V V(BR)EBO IE= -50μA, IC=0 -5 V Collector cut-off current ICBO VCB=-20V,IE=0 -0.5 μA Emitter cut-off current IEBO VEB= -4V,IC=0 -0.5 μA DC current gain hFE VCE=-3V,IC= -100mA VCE(sat) Collector-emitter saturation voltage fT Transition frequency Cob Collector output capacitance IE=0 82 390 IC=-500 mA, IB= -50mA VCE=-5V, IC= -50mA, f=100MHz VCB=-10V,IE=0,f=1MHz -0.5 50 200 V MHz 12 30 CLASSIFICATION OF hFE Rank Range Marking P Q R 82-180 120-270 180-390 AHP AHQ AHR １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ pF 2SB1 1 97 TYPICAL CHARACTERISTICS 2SB1197 ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５