2SB7 66 TRANSISTOR(PNP) SOT-89 1. BASE FEATURES z Large collector power dissipation PC z Complementary to 2SD874 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1 A PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC =-10μA, IE=0 -30 V Collector-emitter breakdown voltage V(BR)CEO IC =-2mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA, IC=0 -5 V Collector cut-off current ICBO VCB=-20V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-4V, IC=0 -0.1 μA hFE(1) VCE=-10V, IC=-500mA 85 hFE(2) VCE=-5V, IC=-1A 50 340 DC current gain Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA -0.2 -0.4 V Base-emitter saturation voltage VBE(sat) IC=-500mA, IB=-50mA -0.85 -1.2 V fT Transition frequency Cob Collector output capacitance CLASSIFICATION OF Rank Range Marking VCE=-10V, IC=-50mA, f=200MHz 200 VCB=-10V, IE=0, f=1MHz 20 MHz 30 hFE(1) Q R S 85-170 120-240 170-340 AQ AR AS １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ pF 2SB7 66 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５