A733 TRANSISTOR (PNP) z z SOT-23 FEATURE Collector-Base Voltage Complement to C945 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA PC Collector Power Dissipation 200 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -5uA,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE= -50uA, IC=0 -5 V Collector cut-off current ICBO VCB= -60 V , IE=0 -0.1 uA Emitter cut-off current IEBO VEB= -5 V , -0.1 uA DC current gain hFE VCE= -6 V, IC= -1mA Collector-emitter saturation voltage VCE(sat) IC=0 120 IC= -100mA, IB=- 10mA Base-emitter voltage VBE(on) VCE=-6V,IC=-1.0mA -0.58 Transition frequency fT VCE=-6V,IC=-10mA 50 Collector output capacitance Cob VCB=-10V,IE=0,f=1MHZ Noise figure NF VCE=-6V,IC=-0.3mA, Rg=10kΩ,f=100HZ 475 -0.18 -0.3 V -0.62 -0.68 V MHz 4.5 7 pF 6 20 dB CLASSIFICATION OF hFE Rank Range L H 120-220 220-475 MARKING CS １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ A733 Typical Characteristics ２ JinYu semiconductor www.htsemi.com