Inchange Semiconductor Product Specification 2N4398 2N4399 2N5745 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N5301/5302/5303 ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・For use in power amplifier and switching circuits applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 导体 半 电 Absolute maximum ratings(Ta=℃) SYMBOL 固 VCBO PARAMETER CONDITIONS C U D ICON 2N4398 Collector-base voltage 2N4399 VCEO VEBO IC INCH Collector-emitter voltage Open emitter M E S E 2N4398 2N4399 Open base 2N5745 Emitter-base voltage -60 Base current PD Total power dissipation Tj Tstg V -80 -40 -60 V -80 Open collector -5 2N4398/4399 -30 2N5745 -20 Collector current IB UNIT -40 2N5745 ANG TOR VALUE V A -7.5 A 200 W Junction temperature 200 ℃ Storage temperature -65~200 ℃ VALUE UNIT 0.875 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N4398 2N4399 2N5745 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N4398 VCEO(SUS) Collector-emitter sustaining voltage 2N4399 VCEsat-2 VCEsat-3 IC=-0.2A ;IB=0 V -1.5 2N4398/4399 IC=-20A ;IB=-2A 2N5745 IC=-20A ;IB=-4A IC=-30A ;IB=-6A 2N4398/4399 体 半导 2N4398/4399 V V TOR -1.85 C U D ON IC=-15A ;IB=-1.5A EMIC IC=-20A ;IB=-2A S E G AN INCH -4.0 -1.7 2N5745 Base-emitter saturation voltage V -1.6 2N4398/4399 固电 -2.0 IC=-10A; IB=-1A 2N5745 Base-emitter saturation voltage Base-emitter on voltage -1.0 2N5745 Base-emitter saturation voltage VBE-2 V -1.0 IC=-15A ;IB=-1.5A Collector-emitter saturation voltage Base-emitter on voltage -0.75 2N4398/4399 VBEsat-1 VBE-1 -80 2N5745 Collector-emitter saturation voltage UNIT V IC=-10A; IB=-1A Collector-emitter saturation voltage Only for 2N4398 2N4399 VBEsat-3 MAX -60 2N4398/4399 Collector-emitter saturation voltage VCEsat-4 VBEsat-2 TYP. -40 2N5745 VCEsat-1 MIN V -2.0 -2.5 2N5745 IC=-20A ;IB=-4A 2N4398/4399 IC=-15A ; VCE=-2V -1.7 2N5745 IC=-10A ; VCE=-2V -1.5 2N4398/4399 IC=-30A ; VCE=-4V -3.0 2N5745 IC=-20A ; VCE=-4V -2.5 V V V ICEX Collector cut-off current VCE= Rated VCEO; VBE(off)=-1.5V TC=150℃ -5 -10 mA ICEO Collector cut-off current VCE=Rated VCEO; IB=0 -5.0 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -5.0 mA hFE-1 DC current gain IC=-1A ; VCE=-2V hFE-2 DC current gain hFE-3 fT 2N5745 IC=-10A ; VCE=-2V 2N4398/4399 IC=-15A ; VCE=-2V 2N5745 IC=-20A ; VCE=-2V 2N4398/4399 IC=-30A ; VCE=-4V 15 DC current gain Transition frequency 40 60 5 2N4398/4399 4 IC=-1A ; VCE=-10V;f=1.0MHz MHz 2 2N5745 2 Inchange Semiconductor Product Specification 2N4398 2N4399 2N5745 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3