Inchange Semiconductor Product Specification 2N4921 2N4922 2N4923 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2N4918/4919/4920 ・Excellent safe operating area ・Low collector saturation voltage APPLICATIONS ・For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base 体 导 半 固电 Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO O IC M E S GE PARAMETER N A H C IN Collector-base voltage Collector-emitter voltage CONDITIONS 2N4921 2N4922 Open emitter VALUE 60 80 2N4921 40 2N4922 Open base Emitter-base voltage UNIT 40 2N4923 2N4923 VEBO R O T C NDU 60 V V 80 Open collector 5 V IC Collector current 1 A ICM Collector current-Peak 3 A IB Base current 1 A PD Total power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ VALUE UNIT 4.16 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N4921 2N4922 2N4923 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2N4921 Collector-emitter sustaining voltage VCEO(SUS) 2N4922 TYP. MAX UNIT 40 IC=0.1A; IB=0 V 60 2N4923 80 VCEsat Collector-emitter saturation voltage IC=1.0A ;IB=0.1A 0.6 V VBEsat Base-emitter saturation voltage IC=1.0A ;IB=0.1A 1.3 V Base-emitter on voltage IC=1A ; VCE=1V 1.3 V 0.5 mA VBE ICEO ICBO ICEX IEBO hFE-1 Collector cut-off current 2N4921 VCE=20V; IB=0 2N4922 VCE=30V; IB=0 2N4923 VCE=40V; IB=0 体 导 半 固电 Collector cut-off current VCB= Rated VCBO ;IE=0 Collector cut-off current Emitter cut-off current N A H C N mA VCE= Rated VCEO; VBE(off)=1.5V TC=125℃ 0.1 0.5 mA VEB=5V; IC=0 1.0 mA O IC M E S GE IC=50mA ; VCE=1V 40 DC current gain IC=500mA ; VCE=1V 30 DC current gain IC=1A ; VCE=1V 10 fT Transition frequency IC=250mA ; VCE=10V;f=1MHz 3.0 COB Output capacitance f=100kHz ; VCB=10V;IE=0 hFE-2 hFE-3 I DC current gain R O T C NDU 0.1 2 150 MHz 100 pF Inchange Semiconductor Product Specification 2N4921 2N4922 2N4923 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 N A H C IN O R O T C NDU IC M E S GE Fig.2 Outline dimensions 3