Inchange Semiconductor Product Specification 2N4398 2N4399 2N5745 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N5301/5302/5303 ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・For use in power amplifier and switching circuits applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2N4398 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N4399 Open emitter IC -60 2N5745 -80 2N4398 -40 2N4399 Emitter-base voltage Open base -60 Base current PD Total power dissipation Tj Tstg V V -80 Open collector -5 2N4398/4399 -30 2N5745 -20 Collector current IB UNIT -40 2N5745 VEBO VALUE V A -7.5 A 200 W Junction temperature 200 ℃ Storage temperature -65~200 ℃ VALUE UNIT 0.875 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N4398 2N4399 2N5745 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N4398 VCEO(SUS) Collector-emitter sustaining voltage 2N4399 VCEsat-2 VCEsat-3 Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage IC=-0.2A ;IB=0 VBE-1 VBE-2 -0.75 V -1.0 2N4398/4399 -1.0 IC=-15A ;IB=-1.5A V -1.5 2N5745 2N4398/4399 IC=-20A ;IB=-2A 2N5745 IC=-20A ;IB=-4A Base-emitter saturation voltage VBEsat-3 -80 2N5745 VBEsat-1 IC=-30A ;IB=-6A 2N4398/4399 -2.0 V -4.0 V -1.6 IC=-10A; IB=-1A V -1.7 2N5745 2N4398/4399 -1.85 IC=-15A ;IB=-1.5A V 2N5745 -2.0 2N4398/4399 IC=-20A ;IB=-2A 2N5745 IC=-20A ;IB=-4A Base-emitter on voltage 2N4398/4399 IC=-15A ; VCE=-2V -1.7 2N5745 IC=-10A ; VCE=-2V -1.5 Base-emitter on voltage 2N4398/4399 IC=-30A ; VCE=-4V -3.0 2N5745 IC=-20A ; VCE=-4V -2.5 Base-emitter saturation voltage UNIT V IC=-10A; IB=-1A Collector-emitter saturation voltage Only for 2N4398 2N4399 Base-emitter saturation voltage MAX -60 2N4398/4399 VCEsat-4 VBEsat-2 TYP. -40 2N5745 VCEsat-1 MIN -2.5 V V V ICEX Collector cut-off current VCE= Rated VCEO; VBE(off)=-1.5V TC=150℃ -5 -10 mA ICEO Collector cut-off current VCE=Rated VCEO; IB=0 -5.0 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -5.0 mA hFE-1 DC current gain IC=-1A ; VCE=-2V hFE-2 DC current gain hFE-3 fT 2N5745 IC=-10A ; VCE=-2V 2N4398/4399 IC=-15A ; VCE=-2V 2N5745 IC=-20A ; VCE=-2V 2N4398/4399 IC=-30A ; VCE=-4V 15 DC current gain Transition frequency 40 60 5 2N4398/4399 4 IC=-1A ; VCE=-10V;f=1.0MHz MHz 2 2N5745 2 Inchange Semiconductor Product Specification 2N4398 2N4399 2N5745 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3