Inchange Semiconductor Product Specification 2N4898 2N4899 2N4900 Silicon PNP Power Transistors DESCRIPTION ・・With TO-66 package ・Low collector saturation voltage ・Excellent safe operating area ・2N4900 complement to type 2N4912 APPLICATIONS ・Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2N4898 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N4899 Open emitter -60 2N4900 -80 2N4898 -40 2N4899 Emitter-base voltage UNIT -40 Open base 2N4900 VEBO VALUE -60 V V -80 Open collector -5 V IC Collector current -1.0 A ICM Collector current-peak -4.0 A IB Base current -1.0 A PD Total Power Dissipation 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 7.0 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N4898 2N4899 2N4900 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N4898 VCEO(SUS) Collector-emitter sustaining voltage 2N4899 MIN TYP. MAX UNIT -40 IC=-0.1A ;IB=0 V -60 -80 2N4900 VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A -0.6 V VBEsat Collector-emitter saturation voltage IC=-1A ;IB=-0.1A -1.3 V Base-emitter on voltage IC=-1A ; VCE=-1V -1.3 V -0.5 mA VBE ICEO Collector cut-off current 2N4898 VCE=-20V; IB=0 2N4899 VCE=-30V; IB=0 2N4900 VCE=-40V; IB=0 ICEX Collector cut-off current VCE=Rated VCEO; VBE(off)=1.5V TC=150℃ -0.1 -1.0 mA ICBO Collector cut-off current VCB=Rated VCBO; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 mA hFE-1 DC current gain IC=-50mA ; VCE=-1V 40 hFE-2 DC current gain IC=-500mA ; VCE=-1V 20 hFE-3 DC current gain IC=-1.0A ; VCE=-1V 10 COB Output capacitance IE=0;VCB=-10V;f=1MHz fT Transition frequency IC=-250mA;VCE=-10V 2 100 100 3.0 pF MHz Inchange Semiconductor Product Specification 2N4898 2N4899 2N4900 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3