isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2N5611 DESCRIPTION ·DC Current Gain: hFE= 30-90@IC= -2.5A ·Wide Area of Safe Operation ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= -100V(Min) ·Complement to Type 2N5612 APPLICATIONS ·Designed for use in high frequency power amplifiers, audio power amplifier and drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -5 A PC Collector Power Dissipation@TC=25℃ 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ MAX UNIT 6.0 ℃/W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2N5611 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2.5A; IB= -0.25A -0.75 V VBE(sat) Base-Emitter Saturation Voltage IC= -2.5A; IB= -0.25A -1.45 V ICEO Collector Cutoff Current VCE= -100V; IB= 0 -1.0 mA ICBO Collector Cutoff Current VCB= -120V; IE= 0 -0.1 mA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -0.1 mA hFE DC Current Gain IC= -2.5A ; VCE= -5V 30 Current-Gain—Bandwidth Product IC= -0.5A ; VCE= -10V 50 fT isc Website：www.iscsemi.cn CONDITIONS MIN -100 B B 2 MAX UNIT V 90 MHz