isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N4912 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 80V(Min) ·Low Collector Saturatioin Voltage: VCE(sat)= 0.6V(Max.)@ IC= 1A ·Wide Area of Safe Operation ·Complement to Type 2N4900 APPLICATIONS ·Designed for driver circuits, switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak 4 A IB Collector Current-Continuous 1 A PC Collector Power Dissipation @ TC=25℃ 25 W TJ Junction Temperature 200 ℃ -65~200 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 7.0 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N4912 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A 0.6 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.1A 1.3 V VBE(on) Base-Emitter On Voltage IC= 1A ; VCE= 1V 1.3 V ICEX Collector Cutoff Current VCE= 80V;VBE(off)= 1.5V VCE= 80V;VBE(off)= 1.5V;TC=150℃ 0.1 1.0 mA ICEO Collector Cutoff Current VCE= 40V; IB= 0 0.5 mA ICBO Collector Cutoff Current VCB= 60V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 50mA ; VCE= 1V 40 hFE-2 DC Current Gain IC= 500mA ; VCE= 1V 20 hFE-3 DC Current Gain IC= 1A ; VCE= 1V 10 Current-Gain—Bandwidth Product IC= 0.25A;VCE= 10V, ftest= 1MHz 3 Output Capacitance IE= 0;VCB= 10V; ftest= 100kHz fT COB isc Website：www.iscsemi.cn CONDITIONS 2 MIN TYP. MAX 80 UNIT V 100 MHz 100 pF