isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BD501/B DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 50V(Min) 80V(Min) ·High Power Dissipation APPLICATIONS ·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER VALUE BD501 55 BD501B 85 BD501 50 BD501B 80 Collector-Base Voltage UNIT V Collector-Emitter Voltage V Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A PC Collector Power Dissipation @ TC=25℃ 75 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case isc Website：www.iscsemi.cn MAX UNIT 1.39 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BD501/B ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD501 VCEO(SUS) Collector-Emitter Sustaining Voltage MAX IC= 30mA ;IB= 0 80 IC= 5A; IB= 0.5A B Collector-Emitter Saturation Voltage BD501B IC= 3.5A; IB= 0.35A BD501 IC= 5A; VCE= 4V Base-Emitter On Voltage BD501B UNIT V B BD501 VBE(on) TYP. 50 BD501B VCE(sat) MIN 1.0 V 1.6 V 1.0 mA 1.0 mA IC= 3.5A; VCE= 4V VCB= 55V;IE= 0 ICBO Collector Cutoff Current VCB= 85V;IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 BD501 hFE 15 DC Current Gain BD501B fT IC= 5A; VCE= 4V Current-Gain—Bandwidth Product isc Website：www.iscsemi.cn 90 IC= 3.5A; VCE= 4V IC= 1.0A ; VCE= 10V 2 8 MHz