ISC 2SA1746

INCHANGE Semiconductor
Product Specification
2SA1746
Silicon PNP Power Transistor
DESCRIPTION
·Low Collector Saturation Voltage
:VCE(sat)= -0.5(V)(Max)@IC= -5A
·Good Linearity of hFE
APPLICATIONS
·Designed for chopper regulator, switch and
purpose applications
general
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-70
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-12
A
ICM
Collector Current-Peak
-20
A
IB
Base Current-Continuous
-4
A
PC
Collector Power Dissipation
@ TC=25℃
60
W
TJ
Junction Temperature
150
℃
-55~150
℃
B
Tstg
Storage Temperature Range
INCHANGE Semiconductor
Product Specification
2SA1746
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -25mA ; IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -5A; IB= -80mA
-0.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= -5A; IB= -80mA
-1.2
V
ICBO
Collector Cutoff Current
VCB= -70V ; IE= 0
-10
μA
IEBO
Emitter Cutoff Current
VEB= -6V; IC= 0
-10
μA
hFE
DC Current Gain
IC= -5A ; VCE= -1V
COB
Output Capacitance
IE= 0 ; VCB= -10V;f= 1.0MHz
400
pF
Current-Gain—Bandwidth Product
IE= 1A ; VCE= -12V
25
MHz
0.5
μs
0.6
μs
0.3
μs
fT
CONDITIONS
MIN
TYP.
MAX
-50
UNIT
V
B
B
50
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
IC= -5A , RL= 4Ω,
IB1= -IB2= -80mA,VCC= -20V
Fall Time
2