isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3835 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V (Min) ·Good Linearity of hFE APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse 14 A IB Base Current-Continuous 3 A PC Collector Power Dissipation @ TC=25℃ 70 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3835 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A 1.2 V ICBO Collector Cutoff Current VCB= 200V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 8V; IC= 0 100 μA hFE DC Current Gain IC= 3A ; VCE= 4V Current-Gain—Bandwidth Product IE= -0.5A ; VCE= 12V 30 MHz Output Capacitance IE=0 ; VCB=10V;ftest=1.0MHz 110 pF fT COB CONDITIONS MIN TYP. MAX 120 UNIT V B B 70 220 Switching times ton Turn-on Time tstg Storage Time tf IC= 3A ;IB1=0.3A; IB2= -0.6A RL= 16.7Ω; VCC= 50V Fall Time hFE Classifications O Y G 70-120 100-200 160-220 isc Website：www.iscsemi.cn 2 0.5 μs 3.0 μs 0.5 μs INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Website：www.iscsemi.cn isc Product Specification 2SC3835