isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3835G DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V (Min) ·Good Linearity of hFE APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER s c s .i VALUE ww VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w UNIT 200 V 120 V 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse 14 A IB Base Current-Continuous 3 A PC Collector Power Dissipation @ TC=25℃ 70 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3835G ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A 1.2 V ICBO Collector Cutoff Current VCB= 200V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 8V; IC= 0 100 μA hFE DC Current Gain IC= 3A ; VCE= 4V Current-Gain—Bandwidth Product IE= -0.5A ; VCE= 12V fT COB w w ton Turn-on Time tstg Storage Time Fall Time isc Website：www.iscsemi.cn MIN TYP. 160 n c . i m e IC= 3A ;IB1=0.3A; IB2= -0.6A RL= 16.7Ω; VCC= 50V 2 UNIT V B IE=0 ; VCB=10V;ftest=1.0MHz MAX 120 B s c s i . w Output Capacitance Switching times tf CONDITIONS 220 30 MHz 110 pF 0.5 μs 3.0 μs 0.5 μs isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3835G s c s i . w n c . i m e w w isc Website：www.iscsemi.cn