ISC 2SC3835G

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2SC3835G
DESCRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@ IC=3A
·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V (Min)
·Good Linearity of hFE
APPLICATIONS
·Designed for use in humidifier , DC/DC converter and
general purpose applications
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ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
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VALUE
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VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
w
UNIT
200
V
120
V
8
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Pulse
14
A
IB
Base Current-Continuous
3
A
PC
Collector Power Dissipation
@ TC=25℃
70
W
TJ
Junction Temperature
150
℃
-55~150
℃
B
Tstg
Storage Temperature Range
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2SC3835G
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 50mA ; IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 3A; IB= 0.3A
0.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 3A; IB= 0.3A
1.2
V
ICBO
Collector Cutoff Current
VCB= 200V; IE= 0
100
μA
IEBO
Emitter Cutoff Current
VEB= 8V; IC= 0
100
μA
hFE
DC Current Gain
IC= 3A ; VCE= 4V
Current-Gain—Bandwidth Product
IE= -0.5A ; VCE= 12V
fT
COB
w
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ton
Turn-on Time
tstg
Storage Time
Fall Time
isc Website:www.iscsemi.cn
MIN
TYP.
160
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IC= 3A ;IB1=0.3A; IB2= -0.6A
RL= 16.7Ω; VCC= 50V
2
UNIT
V
B
IE=0 ; VCB=10V;ftest=1.0MHz
MAX
120
B
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Output Capacitance
Switching times
tf
CONDITIONS
220
30
MHz
110
pF
0.5
μs
3.0
μs
0.5
μs
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2SC3835G
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isc Website:www.iscsemi.cn