isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4434 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) ·High Switching Speed APPLICATIONS ·Designed for switching regulator, lighting inverter, and general purpose applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s .i PARAMETER ww VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w VALUE UNIT 500 V 400 V 10 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 5 A PC Collector Power Dissipation @TC=25℃ 120 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4434 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A 0.7 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 1.6A 1.3 V ICBO Collector Cutoff Current VCB= 500V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 100 μA hFE DC Current Gain IC= 8A; VCE= 4V COB Output Capacitance fT w w ton Turn-On Time tstg Storage Time TYP. MAX 400 n c . i m e UNIT V B 10 25 IE= 0; VCB= 10V; f= 1MHz 135 pF IE= -1.5A; VCE= 12V 10 MHz IC= 8A; IB1= 1.6A; IB2= -3.2A; VCC= 200V; RL= 25Ω Fall Time isc Website：www.iscsemi.cn MIN B s c s i . w Current-Gain—Bandwidth Product Switching Times tf CONDITIONS 2 0.5 μs 2.0 μs 0.15 μs