Inchange Semiconductor Product Specification 2SD1313 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PL package ·High power dissipation ·High collector current ·High speed switching ·Low saturation voltage APPLICATIONS ·High power amplifier applications ·High power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PL) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 350 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 25 A ICM Collector current-peak 35 A IB Base current 10 A IBM Base current-peak 15 A PC Collector power dissipation 200 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD1313 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=15A ;IB=3A 1.0 V VBEsat Base-emitter saturation voltage IC=15A ;IB=3A 1.7 V ICBO Collector cut-off current VCB=800V; IE=0 1 mA IEBO Emitter cut-off current VEB=7V; IC=0 1 mA hFE-1 DC current gain IC=1A ; VCE=5V 15 hFE-2 DC current gain IC=25A ; VCE=5V 6 Transition frequency IC=1A ; VCE=10V Collector output capacitance f=1MHz;VCB=50V,f=1MHz fT COB CONDITIONS MIN TYP. MAX 350 UNIT V 6 MHz 170 pF 0.8 μs 3.0 μs 0.5 μs Switching times ton Turn-on time tstg Storage time tf IC=15A ;IB1=-IB2=3A VCC≈200V,RL=13.3Ω Fall time 2 Inchange Semiconductor Product Specification 2SD1313 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.50mm) 3