ISC 2SA768

Inchange Semiconductor
Product Specification
2SA768
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220 package
·Complement to type 2SC1826
APPLICATIONS
·For low frequency power
amplifier applicattions
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-60
V
VCEO
Collector-emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-5
V
-4
A
30
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SA768
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA ,IB=0
-60
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA ,IE=0
-60
V
VCEsat
Collector-emitter saturation voltage
IC=-3A; IB=-0.3A
-1.0
V
VBEsat
Base-emitter saturation voltage
IC=-3A; IB=-0.3A
-1.5
V
ICBO
Collector cut-off current
VCB=-60V; IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-10
μA
hFE
DC current gain
IC=-1A ; VCE=-4V
Transition frequency
IC=-0.5A ; VCE=-10V
fT
CONDITIONS
2
MIN
TYP.
60
MAX
UNIT
240
10
MHz
Inchange Semiconductor
Product Specification
2SA768
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3