2SC6082 Ordering number : ENA0279 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6082 50V / 15A High-Speed Switching Applications Applications • High-speed switching applications (switching regulator, driver circuit). Features • • • • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 60 V Collector-to-Emitter Voltage VCES 60 V Collector-to-Emitter Voltage VCEO 50 V Emitter-to-Base Voltage VEBO 6 V IC 15 A 20 A Collector Current Collector Current (Pulse) Base Current ICP PW≤10µs, duty cycle≤10% IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C 3 A 2 W 25 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO Emitter Cutoff Current IEBO DC Current Gain hFE1 hFE2 Conditions Ratings min typ VCB=40V, IE=0A VEB=4V, IC=0A VCE=2V, IC=330mA VCE=2V, IC=10A Unit max 200 10 µA 10 µA 560 50 Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72606 / 31506FA MS IM TB-00002089 No. A0279-1/4 2SC6082 Continued from preceding page. Parameter Symbol Gain-Bandwidth Product Base-to-Emitter Saturation Voltage Collector-to-Emitter Breakdown Voltage VCE(sat) IC=7.5A, IB=375mA IC=7.5A, IB=375mA 200 V(BR)CES V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Turn-ON Time Fall Time 60 V 50 V 6 V 52 560 ns See specified Test Circuit. 37 ns 4.5 IB1 IB2 OUTPUT RB VR + + 50Ω 16.0 RL 18.1 100µF 14.0 2.4 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML IC -- VCE 20mA 7 6 A 90mA 80m 70mA 60mA 10mA 4 90 mA mA 80 mA 30mA A 8 60m 30mA 40mA 7 20mA 6 15mA mA 50mA 40mA A 50m 70 9 8 5 IC -- VCE 10 From a top 300mA 250mA 200mA 180mA 150mA 120mA 100mA Collector Current, IC -- A 9 2.55 5 10mA 100 5.6 11 10 VCC=25V IC=20IB1= --20IB2=5A 0.7 1 2 3 12 470µF VBE= --5V 1.6 1.2 13 ns 2.8 7.2 3.5 V See specified Test Circuit. INPUT 14 V 60 See specified Test Circuit. PW=20µs D.C.≤1% 3.2 15 mV Switching Time Test Circuit 10.0 2.55 pF 400 1.2 IC=1mA, RBE=∞ IE=100µA, IC=0A Package Dimensions unit : mm 7508-002 0.75 MHz 85 IC=100µA, IE=0A IC=100µA, RBE=0Ω ton tstg tf Storage Time Unit max 195 Collector-to-Emitter Breakdown Voltage Collector Current, IC -- A typ VCE=10V, IC=2A VCB=10V, f=1MHz VBE(sat) V(BR)CBO Collector-to-Base Breakdown Voltage min fT Cob Output Capacitance Collector-to-Emitter Saturation Voltage Ratings Conditions 4 3 5mA 2 3 2 1 1 0 IB=0mA 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Collector-to-Emitter Voltage, VCE -- V 1.8 2.0 IT10574 IB=0mA 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Collector-to-Emitter Voltage, VCE -- V 0.9 1.0 IT10575 No. A0279-2/4 2SC6082 IC -- VBE 16 DC Current Gain, hFE 12 10 8 6 Ta= 75 25°C °C --25° C Collector Current, IC -- A 5 4 0.2 0.4 0.6 0.8 1.0 Gain-Bandwidth Product, f T -- MHz 3 =2 .0 2 0.7V 7 V 1.0V V 100 0.5 0.2V DC Current Gain, hFE V CE 5 3 2 2 3 5 7 1.0 2 3 5 7 10 Collector Current, IC -- A 100 7 5 3 2 7 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 5 7 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT10579 VCE(sat) -- IC IC / IB=20 3 2 0.1 7 5 3 75 °C = Ta 2 C 5° --2 °C 25 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector Current, IC -- A 2 3 IT10581 VBE(sat) -- IC 3 IC / IB=20 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 0.1 = Ta 3 --2 °C 75 5° C 7 5 °C 25 2 3 3 100 IT10580 3 2 2 IT10577 2 IC / IB=50 0.01 0.01 5 7 10 3 7 5 0.01 7 VCE(sat) -- IC 7 3 Collector Current, IC -- A Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 5 2 5 3 3 5 7 1.0 VCE=10V 7 5 2 3 5 10 0.01 3 f=1MHz 10 0.1 2 f T -- IC IT10578 7 Output Capacitance, Cob -- pF 2 Cob -- VCB 1000 5 7 0.1 7 5 5 7 0.1 3 1000 7 3 2 Collector Current, IC -- A Ta=25°C 2 7 5 IT10576 hFE -- IC 10 0.01 100 10 0.01 1.2 Base-to-Emitter Voltage, VBE -- V 1000 25°C --25°C 2 2 0 0 Ta=75°C 3 3 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V VCE=2V 7 14 5 hFE -- IC 1000 VCE=2V 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 5 7 10 2 3 IT10582 2 1.0 Ta= --25°C 7 25°C 5 75°C 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 5 7 10 2 3 IT10583 No. A0279-3/4 2SC6082 Forward Bias A S O 5 µs 00 op 1.0 7 5 ms 10 3 2 DC ion t era Collector Current, IC -- A s =5 PT 1m 10 0m s IC=15A 10 7 5 Collector Dissipation, PC -- W ICP=20A 3 2 3 2 0.1 7 5 3 2 Tc=25°C Single pulse 0.01 0.1 2 3 2.0 No 1.5 he at sin k 1.0 0.5 0 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 100 IT10584 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT10560 PC -- Tc 30 Collector Dissipation, PC -- W PC -- Ta 2.5 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT10561 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2006. Specifications and information herein are subject to change without notice. PS No. A0279-4/4