MCH3220 Ordering number : ENA0180 SANYO Semiconductors DATA SHEET MCH3220 NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications Applications • Relay drivers, lamp drivers, motor drivers, flash. Features • • • • • • • Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE range. Ultrasmall package facilitates miniaturization in end products (mounting height: 0.85mm). High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 15 V Collector-to-Emitter Voltage VCEO 15 V Emitter-to-Base Voltage VEBO 6 V IC 3 A Collector Current Collector Current (Pulse) ICP 6 Base Current 600 Collector Dissipation IB PC Junction Temperature Tj Storage Temperature Tstg Mounted on a ceramic board (600mm2✕0.8mm) A mA 0.8 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Collector Cutoff Current ICBO Emitter Cutoff Current IEBO VCB=12V, IE=0A VEB=4V, IC=0A DC Current Gain hFE fT VCE=2V, IC=500mA VCE=2V, IC=500mA Gain-Bandwidth Product Marking : CT Ratings min typ max 250 Unit 0.1 µA 0.1 µA 400 380 MHz Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 80906 / 11006EA MS IM TB-00001969 No. A0180-1/4 MCH3220 Continued from preceding page. Parameter Symbol Output Capacitance Collector-to-Emitter Saturation Voltage min typ Unit max Cob VCB=10V, f=1MHz 23 VCE(sat)1 IC=1.5A, IB=30mA IC=3A, IB=60mA 70 105 mV 120 180 mV 0.85 1.2 V VCE(sat)2 Base-to-Emitter Saturation Voltage Ratings Conditions VBE(sat) Collector-to-Base Breakdown Voltage V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Turn-ON Time IC=1.5A, IB=30mA IC=10µA, IE=0A Fall Time 15 IC=1mA, RBE=∞ IE=10µA, IC=0A ton tstg tf Storage Time pF V 15 V 6 V See specified Test Circuit. 30 See specified Test Circuit. 210 ns See specified Test Circuit. 11 ns Package Dimensions ns Switching Time Test Circuit unit : mm 7019A-004 0.25 3 INPUT 0 to 0.02 1.6 2.1 IB1 PW=20µs D.C.≤1% 0.15 2.0 OUTPUT IB2 1kΩ VR 50Ω 0.25 1 + + 2 0.65 RL 220µF 470µF 0.3 0.85 VBE= --5V VCC=5V IC=20IB1= --20IB2=1.5A 0.07 1 : Base 2 : Emitter 3 : Collector SANYO : MCPH3 IC -- VCE VCE=2V 20 10mA 2.5 2mA 0.5 0.5 1mA IB=0mA 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Collector-to-Emitter Voltage, VCE -- V 0.9 1.0 25°C 3mA 1.0 1.5 --25°C 5mA 1.5 2.0 Ta=75°C 8mA Collector Current, IC -- A 2.0 IC -- VBE 3.0 15m A 50mA Collector Current, IC -- A 2.5 mA 30mA 3.0 1.0 IT10384 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Base-to-Emitter Voltage, VBE -- V 0.9 1.0 IT10385 No. A0180-2/4 MCH3220 hFE -- IC 1000 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V VCE=2V 7 DC Current Gain, hFE VCE(sat) -- IC 2 5 Ta=75°C 25°C 3 --25°C 2 0.1 7 5 3 °C 75 = Ta 2 C 25° C 5° --2 0.01 7 5 100 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 3 0.01 5 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A VCE(sat) -- IC 3 2 IT10386 5 7 IT10387 VBE(sat) -- IC 2 IC / IB=50 IC / IB=50 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 0.1 7 5 75 = Ta 5°C 3 2 °C 5°C --2 2 1.0 25°C Ta= --25°C 7 75°C 5 0.01 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 5 3 0.01 7 3 5 7 0.1 2 3 5 7 1.0 2 Cob -- VCB 100 f=1MHz Output Capacitance, Cob -- pF 2 100 5 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 Collector Current, IC -- A 5 3 2 0µ s io ms at 10 er s op n 3 2 0.1 7 5 Ta=25°C Single pulse Mounted on a ceramic board (600mm2✕0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector-to-Emitter Voltage, VCE -- V 5 7 1.0 2 3 5 7 10 2 3 IT10391 PC -- Ta 0.8 s 1.0 7 5 0m 10 D 3 0.9 ≤100µs IC=3A 2 Collector-to-Base Voltage, VCB -- V ASO ICP=6A C 3 2 10 0.1 5 IT10390 1m 3 2 3 50 10 7 5 Collector Current, IC -- A 7 7 Collector Dissipation, PC -- W Gain-Bandwidth Product, f T -- MHz 7 3 5 IT10389 VCE=2V 5 3 Collector Current, IC -- A f T -- IC 1000 2 IT10388 M ou 0.7 nt 0.6 ed on ac er 0.5 am ic bo ar 0.4 d (6 00 0.3 m m2 ✕ 0. 0.2 8m m ) 0.1 0 2 3 IT10392 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT10393 No. A0180-3/4 MCH3220 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2006. Specifications and information herein are subject to change without notice. PS No. A0180-4/4