SANYO 2SA2197

2SA2197 / 2SC6102
Ordering number : ENA0463
SANYO Semiconductors
DATA SHEET
2SA2197 / 2SC6102
PNP / NPN Epitaxial Planar Silicon Transistors
DC / DC Converter Applications
Applications
•
Relay drivers, lamp drivers, motor drivers, flash.
Features
•
•
•
•
•
Adoption of MBIT process.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
High allowable power dissipation.
Specifications ( ) : 2SA2197
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--30)40
V
Collector-to-Emitter Voltage
VCEO
(--)30
V
Emitter-to-Base Voltage
VEBO
(--)6
V
IC
(--)7
A
ICP
IB
(--)9
A
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Tc=25°C
(--)1.2
A
1
W
10
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
Gain-Bandwidth Product
hFE
fT
Output Capacitance
Cob
Conditions
VCB=(--)30V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)2V, IC=(--)500mA
VCE=(--)10V, IC=(--)500mA
VCB=(--)10V, f=1MHz
Ratings
min
typ
max
200
Unit
(--)0.1
µA
(--)0.1
µA
560
(250)290
(52)40
MHz
pF
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92706EA MS IM TC-00000207 No. A0463-1/5
2SA2197 / 2SC6102
Continued from preceding page.
Parameter
Symbol
Collector-to-Emitter Saturation Voltage
VCE(sat)
Base-to-Emitterr Saturation Voltage
VBE(sat)
Collector-to-Base Breakdown Voltage
V(BR)CBO
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
Emitter-to-Base Breakdown Voltage
V(BR)EBO
Turn-On Time
Storage Time
min
IC=(--)2.5A, IB=(--)50mA
VCE=(--)2.5V, IB=(--)50mA
IC=(--)10µA, IE=0A
IC=(--)1mA, RBE=∞
tf
max
(--160)125
(--240)185
(--)0.84
(--)1.2
mV
V
V
(--)30
V
(--)6
V
(30)30
ns
See specified Test Circuit.
(190)320
ns
See specified Test Circuit.
(17)14
ns
Package Dimensions
Switching Time Test Circuit
unit : mm (typ)
7515-002
8.0
3.0
Unit
typ
(--30)40
IE=(--)10µA, IC=0A
See specified Test Circuit.
ton
tstg
Fall Time
Ratings
Conditions
IB1
PW=20µs
D.C.≤1%
2.7
4.0
INPUT
OUTPUT
IB2
RB
VR
RL
11.0
100µF
15.5
For PNP, the polarity is reversed.
2
1 : Emitter
2 : Collector
3 : Base
3
1.2
1
VCC=12V
20IB1= --20IB2=IC=2.5A
0.5
0.6
470µF
VBE= --5V
3.0
1.6
0.8
0.8
+
+
1.5
7.0
50Ω
2.4
4.8
SANYO : TO-126
IC -- VCE
--7
2SC6102
--50mA
--6
--30mA
--25mA
--5
--4
--20mA
--15mA
--3
--10mA
--2
--5mA
30mA
25mA
A
40m
A
50m
6
--40mA
Collector Current, IC -- A
Collector Current, IC -- A
IC -- VCE
7
2SA2197
20mA
5
15mA
4
10mA
3
2
5mA
1
--1
IB=0mA
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
Collector-to-Emitter Voltage, VCE -- V
--1.8
--2.0
IT11478
IB=0mA
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Collector-to-Emitter Voltage, VCE -- V
1.8
2.0
IT11479
No. A0463-2/5
2SA2197 / 2SC6102
IC -- VBE
--7
2SA2197
VCE= --2V
--4
--2
25°C
--25°C
°C
--3
4
3
2
1
0
0
--0.2
0
--0.4
--0.6
--0.8
--1.0
Base-to-Emitter Voltage, VBE -- V
--1.2
0.6
0.8
1.0
1.2
IT11305
hFE -- IC
1000
2SC6102
VCE=2V
7
5
DC Current Gain, hFE
5
Ta=75°C
25°C
3
--25°C
2
Ta=75°C
7
7
3
5 7 --0.1
2
3
5 7 --1.0
2
3
5
0.01
5 7 --10
IT11299
Collector Current, IC -- A
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Cob -- VCB
3
2SA2197
f=1MHz
2SC6102
f=1MHz
2
Output Capacitance, Cob -- pF
2
100
7
5
5 7 10
IT11306
Collector Current, IC -- A
Cob -- VCB
3
--25°C
2
100
2
25°C
3
100
5
--0.01
0.4
Base-to-Emitter Voltage, VBE -- V
2SA2197
VCE= --2V
7
0.2
0
IT11298
hFE -- IC
1000
DC Current Gain, hFE
5
Ta=7
5°C
25°C
--25°C
Collector Current, IC -- A
--5
--1
Output Capacitance, Cob -- pF
2SC6102
VCE=2V
6
Ta=7
5
Collector Current, IC -- A
--6
IC -- VBE
7
100
7
5
3
2
3
2
3
5
7 --1.0
2
3
5
7 --10
2
3
Collector-to-Base Voltage, VCB -- V
2
100
7
5
3
3
5
7 --0.1
2
3
3
5
7 1.0
5
7 --1.0
Collector Current, IC -- A
2
3
5
IT11301
2
3
5
7 10
2
3
Collector-to-Base Voltage, VCB -- V
5
7
IT11307
f T -- IC
7
2SA2197
VCE= --10V
2
2
IT11300
3
2
--0.01
10
0.1
7
f T -- IC
5
Gain-Bandwidth Product, f T -- MHz
5
Gain-Bandwidth Product, f T -- MHz
2
--0.1
2SC6102
VCE=10V
5
3
2
100
7
5
3
2
0.01
2
3
5
7 0.1
2
3
5
7 1.0
Collector Current, IC -- A
2
3
5
IT11308
No. A0463-3/5
2SA2197 / 2SC6102
VCE(sat) -- IC
7
2SA2197
IC / IB=20
3
2
--0.1
°C
75
Ta=
7
5
°C
--25
3
25
°C
2
--0.01
7
--0.1
2
3
5
7
2
--1.0
3
5
Collector Current, IC -- A
C
25°
--0.1
5°C
7
Ta=
7
°C
--25
5
3
2
3
5
7
2
--1.0
3
5
Collector Current, IC -- A
3
C
25°
Ta= --25°C
7
75°C
5
3
3
5
7
2
--1.0
3
5
Collector Current, IC -- A
--
0.01
2
3
5
1m
s
10
ms
--10
IT11304
s
s
0µ
50
era
0µ
op
tio
n(
1.0
7
5
DC
25
op
era
3
2
Tc
=
tio
n(
Ta
=
25
2SA2197 / 2SC6102
Tc=25°C
Single pulse
For PNP, the minus sign is omitted.
5
7 1.0
2
3
5
°C
°C
)
)
5
7
10
IT11309
3
2
25
0.1
°C
5°C
7
7
Ta=
5
--25
3
°C
2
2
3
5
7
2
1.0
3
5
7
10
IT11310
VBE(sat) -- IC
2SC6102
IC / IB=50
2
25°C
1.0
Ta= --25°C
7
75°C
5
3
2
0.1
7
10
DC
3
2
3
3
5
2
3
5
7
2
1.0
3
Collector Current, IC -- A
5
7
10
IT11311
PC -- Ta
2SA2197 / 2SC6102
100ms
IC=7A
2
2
1.0
2SC6102
IC / IB=50
1.2
ICP=9A
0.01
0.1
7
VCE(sat) -- IC
ASO
2
10
7
5
°C
25
2
3
25°C
--1.0
3
2
=
Ta
Collector Current, IC -- A
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
--10
IT11303
2SA2197
IC / IB=50
2
0.1
7
5
5
0.01
0.1
7
VBE(sat) -- IC
3
2
°C
75
7
Collector Current, IC -- A
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2
2
--0.1
0.1
7
3
2
2
1.0
2SA2197
IC / IB=50
--0.01
--0.1
Collector Current, IC -- A
--10
IT11302
Collector Dissipation, PC -- W
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
5
3
7
0.1
7
VCE(sat) -- IC
--1.0
7
2SC6102
IC / IB=20
5
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
5
VCE(sat) -- IC
7
1.0
0.8
No
he
at
0.6
sin
k
0.4
0.2
0
7 10
2
Collector-to-Emitter Voltage, VCE -- V
3
5
IT11480
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT11476
No. A0463-4/5
2SA2197 / 2SC6102
PC -- Tc
11
2SA2197 / 2SC6102
Collector Dissipation, PC -- W
10
9
8
7
6
5
4
3
2
1
0
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT11481
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the performance, characteristics, and functions of the described products in the independent state,
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PS No. A0463-5/5