2SA2197 / 2SC6102 Ordering number : ENA0463 SANYO Semiconductors DATA SHEET 2SA2197 / 2SC6102 PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Applications • Relay drivers, lamp drivers, motor drivers, flash. Features • • • • • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications ( ) : 2SA2197 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--30)40 V Collector-to-Emitter Voltage VCEO (--)30 V Emitter-to-Base Voltage VEBO (--)6 V IC (--)7 A ICP IB (--)9 A Collector Current Collector Current (Pulse) Base Current Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C (--)1.2 A 1 W 10 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO Gain-Bandwidth Product hFE fT Output Capacitance Cob Conditions VCB=(--)30V, IE=0A VEB=(--)4V, IC=0A VCE=(--)2V, IC=(--)500mA VCE=(--)10V, IC=(--)500mA VCB=(--)10V, f=1MHz Ratings min typ max 200 Unit (--)0.1 µA (--)0.1 µA 560 (250)290 (52)40 MHz pF Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 92706EA MS IM TC-00000207 No. A0463-1/5 2SA2197 / 2SC6102 Continued from preceding page. Parameter Symbol Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitterr Saturation Voltage VBE(sat) Collector-to-Base Breakdown Voltage V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Turn-On Time Storage Time min IC=(--)2.5A, IB=(--)50mA VCE=(--)2.5V, IB=(--)50mA IC=(--)10µA, IE=0A IC=(--)1mA, RBE=∞ tf max (--160)125 (--240)185 (--)0.84 (--)1.2 mV V V (--)30 V (--)6 V (30)30 ns See specified Test Circuit. (190)320 ns See specified Test Circuit. (17)14 ns Package Dimensions Switching Time Test Circuit unit : mm (typ) 7515-002 8.0 3.0 Unit typ (--30)40 IE=(--)10µA, IC=0A See specified Test Circuit. ton tstg Fall Time Ratings Conditions IB1 PW=20µs D.C.≤1% 2.7 4.0 INPUT OUTPUT IB2 RB VR RL 11.0 100µF 15.5 For PNP, the polarity is reversed. 2 1 : Emitter 2 : Collector 3 : Base 3 1.2 1 VCC=12V 20IB1= --20IB2=IC=2.5A 0.5 0.6 470µF VBE= --5V 3.0 1.6 0.8 0.8 + + 1.5 7.0 50Ω 2.4 4.8 SANYO : TO-126 IC -- VCE --7 2SC6102 --50mA --6 --30mA --25mA --5 --4 --20mA --15mA --3 --10mA --2 --5mA 30mA 25mA A 40m A 50m 6 --40mA Collector Current, IC -- A Collector Current, IC -- A IC -- VCE 7 2SA2197 20mA 5 15mA 4 10mA 3 2 5mA 1 --1 IB=0mA 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Collector-to-Emitter Voltage, VCE -- V --1.8 --2.0 IT11478 IB=0mA 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Collector-to-Emitter Voltage, VCE -- V 1.8 2.0 IT11479 No. A0463-2/5 2SA2197 / 2SC6102 IC -- VBE --7 2SA2197 VCE= --2V --4 --2 25°C --25°C °C --3 4 3 2 1 0 0 --0.2 0 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V --1.2 0.6 0.8 1.0 1.2 IT11305 hFE -- IC 1000 2SC6102 VCE=2V 7 5 DC Current Gain, hFE 5 Ta=75°C 25°C 3 --25°C 2 Ta=75°C 7 7 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 0.01 5 7 --10 IT11299 Collector Current, IC -- A 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Cob -- VCB 3 2SA2197 f=1MHz 2SC6102 f=1MHz 2 Output Capacitance, Cob -- pF 2 100 7 5 5 7 10 IT11306 Collector Current, IC -- A Cob -- VCB 3 --25°C 2 100 2 25°C 3 100 5 --0.01 0.4 Base-to-Emitter Voltage, VBE -- V 2SA2197 VCE= --2V 7 0.2 0 IT11298 hFE -- IC 1000 DC Current Gain, hFE 5 Ta=7 5°C 25°C --25°C Collector Current, IC -- A --5 --1 Output Capacitance, Cob -- pF 2SC6102 VCE=2V 6 Ta=7 5 Collector Current, IC -- A --6 IC -- VBE 7 100 7 5 3 2 3 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Collector-to-Base Voltage, VCB -- V 2 100 7 5 3 3 5 7 --0.1 2 3 3 5 7 1.0 5 7 --1.0 Collector Current, IC -- A 2 3 5 IT11301 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 5 7 IT11307 f T -- IC 7 2SA2197 VCE= --10V 2 2 IT11300 3 2 --0.01 10 0.1 7 f T -- IC 5 Gain-Bandwidth Product, f T -- MHz 5 Gain-Bandwidth Product, f T -- MHz 2 --0.1 2SC6102 VCE=10V 5 3 2 100 7 5 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 IT11308 No. A0463-3/5 2SA2197 / 2SC6102 VCE(sat) -- IC 7 2SA2197 IC / IB=20 3 2 --0.1 °C 75 Ta= 7 5 °C --25 3 25 °C 2 --0.01 7 --0.1 2 3 5 7 2 --1.0 3 5 Collector Current, IC -- A C 25° --0.1 5°C 7 Ta= 7 °C --25 5 3 2 3 5 7 2 --1.0 3 5 Collector Current, IC -- A 3 C 25° Ta= --25°C 7 75°C 5 3 3 5 7 2 --1.0 3 5 Collector Current, IC -- A -- 0.01 2 3 5 1m s 10 ms --10 IT11304 s s 0µ 50 era 0µ op tio n( 1.0 7 5 DC 25 op era 3 2 Tc = tio n( Ta = 25 2SA2197 / 2SC6102 Tc=25°C Single pulse For PNP, the minus sign is omitted. 5 7 1.0 2 3 5 °C °C ) ) 5 7 10 IT11309 3 2 25 0.1 °C 5°C 7 7 Ta= 5 --25 3 °C 2 2 3 5 7 2 1.0 3 5 7 10 IT11310 VBE(sat) -- IC 2SC6102 IC / IB=50 2 25°C 1.0 Ta= --25°C 7 75°C 5 3 2 0.1 7 10 DC 3 2 3 3 5 2 3 5 7 2 1.0 3 Collector Current, IC -- A 5 7 10 IT11311 PC -- Ta 2SA2197 / 2SC6102 100ms IC=7A 2 2 1.0 2SC6102 IC / IB=50 1.2 ICP=9A 0.01 0.1 7 VCE(sat) -- IC ASO 2 10 7 5 °C 25 2 3 25°C --1.0 3 2 = Ta Collector Current, IC -- A Base-to-Emitter Saturation Voltage, VBE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V --10 IT11303 2SA2197 IC / IB=50 2 0.1 7 5 5 0.01 0.1 7 VBE(sat) -- IC 3 2 °C 75 7 Collector Current, IC -- A Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 2 --0.1 0.1 7 3 2 2 1.0 2SA2197 IC / IB=50 --0.01 --0.1 Collector Current, IC -- A --10 IT11302 Collector Dissipation, PC -- W Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 3 7 0.1 7 VCE(sat) -- IC --1.0 7 2SC6102 IC / IB=20 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 VCE(sat) -- IC 7 1.0 0.8 No he at 0.6 sin k 0.4 0.2 0 7 10 2 Collector-to-Emitter Voltage, VCE -- V 3 5 IT11480 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT11476 No. A0463-4/5 2SA2197 / 2SC6102 PC -- Tc 11 2SA2197 / 2SC6102 Collector Dissipation, PC -- W 10 9 8 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT11481 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2006. Specifications and information herein are subject to change without notice. PS No. A0463-5/5