Inchange Semiconductor Product Specification 2SC4020 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220C package ·High breakdown voltage : VCBO=900V(Min) ·Wide area of safe operation APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 3 A ICM Collector current-peak 6 A IB Base current 1.5 A PC Collector power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC4020 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=0.7A; IB=0.14A 0.5 V VBEsat Base-emitter saturation voltage IC=0.7A; IB=0.14A 1.2 V ICBO Collector cut-off current VCB=800V ;IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 100 μA hFE DC current gain IC=0.7A ; VCE=4V fT Transition frequency IE=-0.3A ; VCE=12V 6 MHz COB Output capacitance f=1MHz ; VCB=10V 40 pF 800 UNIT V 10 30 Switching times ton Turn-on time tstg Storage time tf VCC=250V; IC=0.7A IB1=0.1A;IB2=-0.35A; RL=357Ω Fall time 2 1.0 μs 5.0 μs 1.0 μs Inchange Semiconductor Product Specification 2SC4020 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3