ISC 2SC3486

Inchange Semiconductor
Product Specification
2SC3486
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PN package
・High voltage ,high speed
・Wide area of safe operation
APPLICATIONS
・For color TV display horizontal
output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
6
A
ICM
Collector current-peak
16
A
PC
Collector power dissipation
120
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC3486
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA ;RBE=∞
800
V
V(BR)CBO
Collector-base breakdown voltage
IC=5mA ;IE=0
1500
V
V(BR)EBO
Emitter-base breakdown voltage
IE=5mA ;IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=5A; IB=1.2A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=5A; IB=1.2A
1.5
V
ICBO
Collector cut-off current
VCB=800V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1
mA
hFE
DC current gain
IC=1A ; VCE=5V
Transition frequency
IC=1A ; VCE=10V
fT
CONDITIONS
MIN
TYP.
MAX
UNIT
8
3
MHz
Switching times
tstg
tf
Storage time
Fall time
IC=5A;RL=40Ω
IB1=1A; IB2=-2A
2
3.0
μs
0.3
μs
Inchange Semiconductor
Product Specification
2SC3486
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3