Inchange Semiconductor Product Specification 2SC3486 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage ,high speed ・Wide area of safe operation APPLICATIONS ・For color TV display horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 6 A ICM Collector current-peak 16 A PC Collector power dissipation 120 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC3486 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=∞ 800 V V(BR)CBO Collector-base breakdown voltage IC=5mA ;IE=0 1500 V V(BR)EBO Emitter-base breakdown voltage IE=5mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=5A; IB=1.2A 5.0 V VBEsat Base-emitter saturation voltage IC=5A; IB=1.2A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 1 mA hFE DC current gain IC=1A ; VCE=5V Transition frequency IC=1A ; VCE=10V fT CONDITIONS MIN TYP. MAX UNIT 8 3 MHz Switching times tstg tf Storage time Fall time IC=5A;RL=40Ω IB1=1A; IB2=-2A 2 3.0 μs 0.3 μs Inchange Semiconductor Product Specification 2SC3486 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3