isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 150V(Min) ·High DC Current Gain: hFE= 5000( Min.) @(IC= 10A, VCE= 4V) ·Low Collector Saturation Voltage: VCE(sat)= 2.5V(Max)@ (IC= 10A, IB= 10mA) ·Complement to Type 2SB1649 B APPLICATIONS ·Designed for series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous 1 A PC Collector Power Dissipation @TC=25℃ 85 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn 2SD2562 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2562 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A ,IB= 10mA 2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A ,IB= 10mA 3.0 V ICBO Collector Cutoff current VCB= 150V, IE= 0 0.1 mA IEBO Emitter Cutoff current VEB= 5V, IC= 0 0.1 mA hFE DC Current Gain IC= 10A; VCE= 4V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 120 pF Current-Gain—Bandwidth Product IE= -2A; VCE= 12V 70 MHz 0.8 μs 4.0 μs 1.2 μs fT CONDITIONS MIN TYP. MAX 150 UNIT V 5000 Switching Times ton Turn-on Time tstg Storage Time tf VCC= 40V, RL= 4Ω, IC= 10A; IB1= -IB2= 10mA Fall Time hFE Classifications O P Y 5000-12000 6500-20000 15000-30000 isc Website：www.iscsemi.cn 2