isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1295 DESCRIPTION ·High Collector-Emitter Breakdown VoltageV(BR)CEO= -230V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3264 APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -17 A IB Base Current-Continuous -5 A PC Collector Power Dissipation @ TC=25℃ 200 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1295 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A -2.0 V ICBO Collector Cutoff Current VCB= -230V; IE= 0 -100 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -100 μA hFE DC Current Gain IC= -5A; VCE= -4V COB Output Capacitance IE= 0; VCB= -10V;ftest= 1.0MHz 500 pF Current-Gain—Bandwidth Product IE= 2A; VCE= -12V 35 MHz 0.35 μs 1.5 μs 0.3 μs fT CONDITIONS MIN TYP. MAX -230 UNIT V B 50 140 Switching times ton Turn-on Time tstg Storage Time tf IC= -5A ,RL= 12Ω, IB1= -IB2= -0.5A,VCC= -60V Fall Time hFE Classifications O Y 50-100 70-140 isc Website：www.iscsemi.cn 2