Inchange Semiconductor Product Specification 2SB536 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD381 ・Low collector saturation voltage APPLICATIONS ・Audio frequency power amplifier ・Low speed power switching PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -130 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -1.5 A ICM Collector current-peak -3.0 A IB Base current -0.3 A PT Total power dissipation Ta=25℃ 1.5 W TC=25℃ 20 Tj Junction temperature 150 ℃ Tstg Storage temperature -50~150 ℃ Inchange Semiconductor Product Specification 2SB536 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A -2.0 V VBEsat Base-emitter saturation voltage IC=-1A; IB=-0.1A -1.5 V ICBO Collector cut-off current VCB=-120V; IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -1.0 μA hFE-1 DC current gain IC=-5mA ; VCE=-5V 25 hFE-2 DC current gain IC=-0.3A ; VCE=-5V 40 COB Output capacitance IE=0 ; VCB=-10V; f=1MHz 35 pF fT Transition frequency IC=-0.1A ; VCE=-5V 40 MHz CONDITIONS hFE-2 Classifications N M L K 40-80 60-120 80-160 120-250 2 MIN TYP. MAX -120 UNIT V 250 Inchange Semiconductor Product Specification 2SB536 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3