ISC 2SA636A

Inchange Semiconductor
Product Specification
2SA636 2SA636A
Silicon PNP Power Transistors
DESCRIPTION
·With TO-202 package
·Complement to type 2SC1098/1098A
·High breakdown voltage
·High transition frequency
APPLICATIONS
·For audio frequency power amplifier and
low speed switching applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-202) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
CONDITIONS
Open emitter
2SA636
Emitter-base voltage
UNIT
-70
V
-45
Open base
2SA636A
VEBO
VALUE
V
-60
Open collector
-5
V
IC
Collector current
-3
A
ICM
Collector current-peak
-5
A
-0.6
A
IB
Base current
PT
Total power dissipation
B
TC=25℃
10
Ta=25℃
1.2
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SA636 2SA636A
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEsat
Collector-emitter saturation voltage
VBEsat
‹
CONDITIONS
TYP.
MAX
UNIT
IC=-1.5A ;IB=-0.15A
-0.5
-2.0
V
Base-emitter saturation voltage
IC=-1.5A ;IB=-0.15A
-0.8
-2.0
V
ICBO
Collector cut-off current
VCB=-45V; IE=0
-1
μA
IEBO
Emitter cut-off current
VEB=-3V; IC=0
-1
μA
hFE-1
DC current gain
IC=-20mA ; VCE=-5V
20
hFE-2
DC current gain
IC=-0.5A ; VCE=-5V
40
COB
Output capacitance
IE=0; VCB=-10V;f=1MHz
60
pF
fT
Transition frequency
IC=-0.1A ; VCB=-5V
45
MHz
hFE-2 classifications
N
M
L
K
40-60
50-100
80-160
120-250
2
MIN
250
Inchange Semiconductor
Product Specification
2SA636 2SA636A
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3