Inchange Semiconductor Product Specification 2SA1093 Silicon PNP Power Transistors DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC2563 ·High transition frequency APPLICATIONS ·Audio frequency power amplifier applicatios PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -5 V -8 A -0.8 A 80 W IC Collector current IB Base current PT Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ B TC=25℃ Inchange Semiconductor Product Specification 2SA1093 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ,IB=0 VCEsat Collector-emitter saturation voltage IC=-4A; IB=-0.4A -1.0 -2.0 V VBE Base-emitter voltage IC=-4A ; VCE=-5V -1.5 -2.5 V ICBO Collector cut-off current VCB=-120V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 μA hFE-1 DC current gain IC=-1A ; VCE=-5V 55 hFE-2 DC current gain IC=-4A ; VCE=-5V 30 fT Transition frequency IC=-1A ; VCE=-10V 90 MHz Cob Output capacitance IE=0 ; VCB=-10V ;f=1MHz 150 pF CONDITIONS hFE-1 Classifications R O Y 55-110 80-160 120-240 2 MIN TYP. MAX -120 UNIT V 240 Inchange Semiconductor Product Specification 2SA1093 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3