ISC 2SB434

Inchange Semiconductor
Product Specification
2SB434
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220 package
・Complement to type 2SD234
APPLICATIONS
・For low frequency power amplifier
and switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-60
V
VCEO
Collector-emitter voltage
Open base
-50
V
VEBO
Emitter-base voltage
Open collector
-6
V
-3
A
IC
Collector current
PC
Collector power dissipation
1.5
W
TC=25℃
25
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SB434
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-5mA ,IB=0
-50
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA ,IE=0
-60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ,IC=0
-6
V
VCEsat
Collector-emitter saturation voltage
IC=-3A; IB=-0.3A
-1.2
V
VBEsat
Base-emitter saturation voltage
IC=-3A; IB=-0.3A
-1.5
V
ICBO
Collector cut-off current
VCB=-40V; IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-10
μA
hFE
DC current gain
IC=-0.5A ; VCE=-1V
COB
Output capacitance
IE=0 ; VCB=-10V,f=1MHz
90
pF
fT
Transition frequency
IC=-0.5A ; VCE=-10V
3
MHz
‹
CONDITIONS
hFE Classifications
R
O
Y
40-80
70-140
120-240
2
MIN
TYP.
40
MAX
UNIT
240
Inchange Semiconductor
Product Specification
2SB434
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3