isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE = 2000(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage: V(BR)CEO = -40V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -2A APPLICATIONS ·Switching applications. ·Hammer drive, pulse motor drive applications. ·Power amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A PC Collector Power Dissipation TC=25℃ 25 W Tj Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn 2SB677 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB677 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A, IB= -4mA -1.5 V VBE(sat)) Base-Emitter Saturation Voltage IC= -2A, IB= -4mA -2.0 V ICBO Collector Cutoff Current VCB= -60V, IE= 0 -20 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -2.5 mA hFE-1 DC Current Gain IC= -1A; VCE= -2V 2000 hFE-2 DC Current Gain IC= -3A; VCE= -2V 1000 ton Turn-on Time tstg Storage Time tf Fall Time isc Website：www.iscsemi.cn CONDITIONS MIN TYP. -40 UNIT V B B VCC= -30V; IB1= -IB2= -6mA, RL= 10Ω MAX 0.30 μs 0.60 μs 0.25 μs