isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= 3A ·Low Collector Saturation Voltage: VCE (sat)= 1.5V(Max.)@ IC= 3A APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL s c s i . w PARAMETER w w VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage n c . i m e VALUE UNIT 80 V 80 V 5 V 7 A IC Collector Current-Continunous IB Base Current-Continunous 0.2 A PC Collector Power Dissipation @TC=25℃ 50 W Tj Junction Temperature 150 ℃ -65~+150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn 2SD523 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD523 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA 1.5 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 14mA 2.0 V Base-Emitter Saturation Voltage IC= 3A; IB= 6mA 2.5 V ICBO Collector Cutoff Current VCE= 80V; IB= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 3.0 mA hFE-1 DC Current Gain hFE-2 DC Current Gain VBE(sat) Switching Times Turn-on Time tstg Storage Time MIN TYP. B B n c . i m e Fall Time isc Website：www.iscsemi.cn IC= 3A, VCE= 3V 2000 IC= 7A, VCE= 3V 1000 IC= 3A, IB1= -IB2=6mA; VCC= 45V; RL= 15Ω UNIT V B s c s i . w MAX 80 B w w ton tf CONDITIONS 15000 0.8 μs 3.0 μs 2.5 μs