isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE = 1000(Min)@ IC= 1.5A ·Collector-Emitter Breakdown Voltage: V(BR)CEO = 120V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V(Max)@ IC= 1.5A ·Complement to Type 2SB765 APPLICATIONS ·Medium speed and power switching applications. VALUE UNIT 120 n c . i m e V 120 V s c s .i ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL ww PARAMETER w VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 6 A PC Collector Power Dissipation TC=25℃ 30 W Tj Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn 2SD864 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD864 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA, RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA , IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A, IB= -3mA 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A, IB= -30mA 3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 1.5A, IB= -3mA 2.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 3A, IB= -30mA 3.5 V VCB= 120V, IE= 0 100 μA VCE= 100V, RBE= ∞ 10 μA ICBO Collector Cutoff Current ICEO Collector Cutoff Current hFE DC Current Gain Switching times Turn-on Time tstg Storage Time tf Fall Time isc Website：www.iscsemi.cn MIN TYP. s c s .i IC= 1.5A; VCE= 3V IC= 1.5A; IB1= -IB2= 3mA UNIT V 7 V n c . i m e B MAX 120 B ww w ton CONDITIONS 1000 20000 0.5 μs 4.5 μs 1.1 μs