ISC 2SD689

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
DESCRIPTION
·High DC Current Gain: hFE = 1000(Min)@ IC= 1A
·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100V(Min)
·Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V(Max)@ IC= 1A
·Complement to Type 2SB679
APPLICATIONS
·Low frequency medium power amplifier and medium speed
switching applications.
·Pulse motor driver, relay drive and hammer drive applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
1.5
A
PC
Collector Power Dissipation
TC=25℃
10
W
Tj
Junction Temperature
150
℃
-55~150
℃
Tstg
Storage Temperature Range
isc Website:www.iscsemi.cn
2SD689
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD689
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 10mA; IB= 0
100
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
10
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 1A ,IB= 2mA
1.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 1A ,IB= 2mA
2.5
V
ICBO
Collector Cutoff Current
VCB= 100V, IE= 0
10
μA
IEBO
Emitter Cutoff Current
VEB= 10V; IC= 0
10
μA
hFE-1
DC Current Gain
IC= 0.1A ; VCE= 2V
2000
hFE-2
DC Current Gain
IC= 1A ; VCE= 2V
1000
Switching Times
ton
Turn-On Time
ts
Storage Time
tf
Fall Time
isc Website:www.iscsemi.cn
IB1= -IB2= 2mA; VCC= 30V
RL= 30Ω;PW=20μs;
Duty Cycle≤1%
0.3
μs
2.0
μs
0.7
μs