2SD2142 TRANSISOR (NPN) SOT–23 FEATURES Darlington Connection for a High hFE High Input Impedance MARKING: R1M 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 3. COLLECTOR Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 12 V IC Collector Current 300 mA PC Collector Power Dissipation 200 mW Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Test Collector-base breakdown voltage Parameter V(BR)CBO IC=100µA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 32 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 12 V Collector cut-off current ICBO VCB=30V, IE=0 0.1 µA Emitter cut-off current IEBO VEB=12V, IC=0 0.1 µA 1.4 V DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance hFE VCE(sat) fT Cob conditions VCE=3V, IC=100mA JinYu Typ Max Unit 5000 IC=200mA, IB=0.2mA VCE=5V,IC=10mA, f=100MHz 200 MHz VCB=10V, IE=0, f=1MHz 2.5 pF １ semiconductor Min www.htsemi.com